PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain ● Low collector-emitter saturation voltage ● Complementary types: BSS 79, BSS 81 (NPN) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BSS 80 B BSS 80 C BSS 82 B BSS 82 C CHs CJs CLs CMs Q62702-S557 Q62702-S492 Q62702-S560 Q62702-S482 B SOT-23 E C Maximum Ratings Parameter Symbol Values BSS 82 BSS 80 Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 60 Emitter-base voltage VEB0 5 Collector current IC 800 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 77 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg 60 mA A mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 290 Junction - soldering point Rth JS ≤ 220 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BSS 80 BSS 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 40 60 – – – – DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 V(BR)CE0 Collector-base breakdown voltage IC = 10 µA V(BR)CB0 60 – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 5 – – Collector-base cutoff current VCB = 50 V VCB = 50 V, TA = 150 ˚C ICB0 – – – – 10 10 nA µA Emitter-base cutoff current VEB = 3 V IEB0 – – 10 nA DC current gain IC = 100 µA, VCE = 10 V hFE IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1) BSS 80 B/82 B BSS 80 C/82 C BSS 80 B/82 B BSS 80 C/82 C BSS 80 B/82 B BSS 80 C/82 C BSS 80 B/82 B BSS 80 C/82 C BSS 80 B/82 B BSS 80 C/82 C VCEsat Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 – 40 75 40 100 40 100 40 100 40 50 Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1) V – – – – – – – – – – – – – – – – 120 300 – – V – – – – 0.4 1.6 – – – – 1.3 2.6 BSS 80 BSS 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz fT – 250 – MHz Open-circuit output capacitance VCB = 10 V, f = 1 MHz Cobo – 6 – pF td tr – – – – 10 40 ns ns tstg tf – – – – 80 30 ns ns VCC = 30 V, IC = 150 mA, IB1 = 150 mA Delay time Rise time VCC = 6 V, IC = 150 mA, IB1 = IB2 = 15 mA Storage time Fall time Test circuits Delay and rise time Semiconductor Group Storage and fall time 3 BSS 80 BSS 82 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance Ccb = f (VCB) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 4 BSS 80 BSS 82 Saturation voltage IC = f (VBE sat, VCE sat) hFE = 10 Delay time td = f (IC) Rise time tr = f (IC) Storage time tstg = f (IC) Fall time tf = f (IC) Semiconductor Group 5 BSS 80 BSS 82 DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 6