Product Overview NGD8201A: Ignition IGBT, N-Channel, 20 A, 400 V For complete documentation, see the data sheet Product Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • • • • • • • • • DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Intergrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Package is Avialable Applications • • • • End Products Ignition Systems Direct Fuel Injection Coil-on-Plug Driver-on-Coil • Automotive Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) NGD8201ANT4G AEC Qualified Active 400 1.3 20 Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) PPAP Capable Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) 250 PD Max (W) CoPack Pack age aged Type Diode 125 No DPA K-3