Product Overview NGTB25N120FL2WA: 1200 V Field Stop II IGBT, 25 A For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. Features • • • • • • • Benefits TO-247-4L Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin Optimized for High Speed Switching These are Pb-Free Devices • Minimal Eon Losses Applications End Products • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Neutral Point Clamp Topology • Industrial Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) NGTB25N120FL2WAG Pb-free NEW 1200 2 0.66 0.99 136 8.4 181 25 2.51 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode Yes TO247 4Lead