Product Overview NGB8202A: Ignition IGBT, N-Channel, 20 A, 400 V For complete documentation, see the data sheet Product Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry intergrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or whatever high voltage and high current switching is required. Features • • • • • • • • Ideal for Coil-on-Plug and Driver-on-Coil Applications. Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load. Intergrated ESD Diode Protection Low Threshhold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capabilty Optional Gate Resistor (RG and Gate-Emitter Resistor (RGE) Applications End Products • Ignition Systems • Direct Fuel Injection • Automotive Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) NGB8202ANT4G Pb-free Active 400 1.3 Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 150 No 2 20 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 250 D PA K-3