Product Overview

Product Overview
NGB8206A: Ignition IGBT, N-Channel, 20 A, 350 V
For complete documentation, see the data sheet
Product Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry intergrating ESD and Over-Voltage clamped
protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage
and high current switching is required.
Features
•
•
•
•
•
•
•
Gate-Emitter ESD Protection
Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)
Applications
•
•
•
•
End Products
Ignition Systems
Direct Fuel Injection
Coil-on-Plug
Driver-on-Coil
• Automotive
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
NGB8206ANSL3G
Pb-free
Active
350
20
1.3
Active
350
20
Active
350
20
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
250
150
No
D PA
K-3
1.3
250
150
No
D PA
K-3
1.3
250
150
No
D PA
K-3
2
Halide free
2
NGB8206ANT4G
Pb-free
Halide free
2
NGB8206ANTF4G
Pb-free
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016