Product Overview NGB8206A: Ignition IGBT, N-Channel, 20 A, 350 V For complete documentation, see the data sheet Product Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry intergrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • • • • • • • Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE) Applications • • • • End Products Ignition Systems Direct Fuel Injection Coil-on-Plug Driver-on-Coil • Automotive Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) NGB8206ANSL3G Pb-free Active 350 20 1.3 Active 350 20 Active 350 20 Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 250 150 No D PA K-3 1.3 250 150 No D PA K-3 1.3 250 150 No D PA K-3 2 Halide free 2 NGB8206ANT4G Pb-free Halide free 2 NGB8206ANTF4G Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016