Product Overview NGTB20N120IH: IGBT, 20 A, 1200 V in TO-247 For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features • • • • Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application This is a Pb-Free Device Applications • Inductive Heating • Consumer Appliances • Soft Switching Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) NGTB20N120IHWG Pb-free NEW 1200 2.2 0.48 20 2.2 Eon Typ (mJ) Trr Typ (ns) Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) 150 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) 341 CoPack Pack age aged Type Diode TO247