Product Overview

Product Overview
NGTB20N120IH: IGBT, 20 A, 1200 V in TO-247
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides and
superior performance in demanding switching applications, and offers
low on-state voltage with minimal switching loss. The IGBT is well
suited for resonant or soft switching applications.
Features
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
This is a Pb-Free Device
Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
NGTB20N120IHWG
Pb-free
NEW
1200
2.2
0.48
20
2.2
Eon
Typ
(mJ)
Trr
Typ
(ns)
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
150
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
341
CoPack
Pack age
aged Type
Diode
TO247