Product Overview NGTB20N120IHR: IGBT 1200V 20A FS2-RC Induction Heating For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS)Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features Benefits • Optimized for Low Case Temperature in IH Cooker Applications • Extremely Efficient Trench with Fieldstop Technology • Reliable and Cost Effective Single Die Solution • Low Switching Loss Reduces System Power Dissipation Applications • Inductive Heating • Consumer Appliances • Soft Switching Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) NGTB20N120IHRWG Pb-free NEW 1200 2.1 0.45 20 1.75 Eon Typ (mJ) Trr Typ (ns) Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) 225 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 384 Yes TO247