Product Overview NGTB15N120IH: IGBT, 15 A, 1200V in TO247 For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features • • • • Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application This is a Pb-Free Device Applications • Inductive Heating • Consumer Appliances • Soft Switching Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) NGTB15N120IHWG Pb-free NEW 1200 2.1 0.36 15 2 Eon Typ (mJ) Trr Typ (ns) Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) 120 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) 278 CoPack Pack age aged Type Diode TO247