SiC Schottky Barrier Diodes SCS110AX 3pin SCS110AG 2pin SiC Schottky barrier diodes have are now available for high voltage resistance, large current circuits. High-speed switching characteristics minimize switching loss, improving device operating frequency. Ene rgy Sa ving Dramatically lower switching loss Applications Ultra-short reverse recovery Switching Waveforms time (impossible to achieve 12 with silicon) enables 10 8 recovery charge (Qrr), reducing switching loss Current (A) high-speed switching. This minimizes the reverse • Switching circuits • Motor drive circuits • PFC (Power Factor Correction) circuits and others SiC SBD 6 A smaller area means lower loss 4 Main Circuit: SW Power Supply SiC SBD 0 + -6 Si FRD Qrr -4 end-product miniaturization. PFC Circuit: Boost voltage + DC 2 -2 significantly, contributing to Circuit Example 0 IC 100 Time (nsec) In addition, SiC devices IC 200 trr Temperature Characteristics unlike conventional silicon fast recovery diodes where the trr increases with temperature. This enables high-temperature driving without increasing 90 Conditions IF=10A di/dt= -350A/Ǵsec 80 70 Si FRD Stable temperature characteristics 60 50 SiC diodes exhibit stabler 40 trr difference inreases with temperature 30 20 10 temperature characteristics SiC SBD (i.e. forward voltage) SiC is largely temp.-independent compared with 0 0 10 20 30 40 switching loss. 50 60 70 80 SBD: Forward Characteristics 10 90 100 silicon-based devices, Ta (˚C) simplifying parallel connection(s) and SiC wafer supplier SiCrystal has joined the ROHM Group. This makes it possible to perform manufacturin g completely in-house, from ingot formation to power device fabrication, resulting in cutting-edge products with superior reliability and quality. preventing thermal runaway - unlike Si FRDs. FORWARD CURREN T : I F (A) regardless of temperature, Reverse Recovery Time trr (nsec) 100 maintain a constant trr 25˚C 75˚C 125˚C 5 0 0 0.5 1 1.5 2 FORWARD VO LTAGE : V F(V) Specifications Part No. Package SCS110AX 3-pin SCS110AG 2-pin V RM (V) V R (V) Io (A) IFSM (A) Tj (˚C) Tstg (˚C) V F (V) typ. IF (A) IR(µA) typ. V R (V) trr (nsec) typ. 600 600 10 40 150 -55 to +150 1.5 10 2 600 15 The content specified in this document is correct as of 23th. Apr.2010. 53X6308E 05.2010 Conditions IF=10A VR=400V di/dt=-350A/µsec