SCS110AG | SiC Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1 SiC Schottky Barrier Diodes SCS110AG [ Product description ] Outline Switching loss reduced, enabling high-speed switching . (2-pin package) Features • Shorter recovery time • Reduced temperature dependence • High-speed switching possible Product specifications 9.8x15.4(t=4.4) Absolute maximum ratings (Ta=25ºC) Rated parameters Dimensions Standard value Conditions Repetitive peak reverse voltage VRM(V) 600 Reverse voltage(DC) VR(V) 600 Average rectified forward current IO(A) 10 Forward current surge peak IFSM(A) 40 60Hz/1cyc Junction temperature Tj(ºC) Storage temperature Tstg(ºC) 150 -55 to +150 Equivalent circuit diagram *The contents described here are just outline for introduction. Please obtain the specification sheets from us for thorough check before use. Copyright © 1997-2011 ROHM CO.,LTD. http://www.rohm.com/products/discrete/sic/sic_schottky_barrier/scs110ag/print.html 2/16/2011