ROHM SCS112AG

SCS110AG | SiC Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD.
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SiC Schottky Barrier Diodes
SCS110AG
[ Product description ]
Outline
Switching loss reduced, enabling high-speed switching . (2-pin package)
Features
• Shorter recovery time
• Reduced temperature dependence
• High-speed switching possible
Product specifications
9.8x15.4(t=4.4)
Absolute maximum ratings (Ta=25ºC)
Rated parameters
Dimensions
Standard value
Conditions
Repetitive peak reverse voltage VRM(V)
600
Reverse voltage(DC) VR(V)
600
Average rectified forward current IO(A)
10
Forward current surge peak IFSM(A)
40 60Hz/1cyc
Junction temperature Tj(ºC)
Storage temperature Tstg(ºC)
150
-55 to +150
Equivalent circuit
diagram
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
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http://www.rohm.com/products/discrete/sic/sic_schottky_barrier/scs110ag/print.html
2/16/2011