Product Overview NGTD20T120F2: IGBT 1200V 20A FS2 bare die For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 10 µs Short Circuit Capability These are Pb-Free Devices Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) NGTD20T120F2SWK Pb-free NEW 1200 2 10 NEW 1200 2 10 Halide free NGTD20T120F2WP Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 PD Max (W) CoPack Pack age aged Type Diode