Product Overview

Product Overview
NGTD20T120F2: IGBT 1200V 20A FS2 bare die
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss.
Features
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Optimized for High Speed Switching
10 µs Short Circuit Capability
These are Pb-Free Devices
Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
NGTD20T120F2SWK
Pb-free
NEW
1200
2
10
NEW
1200
2
10
Halide free
NGTD20T120F2WP
Pb-free
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
PD
Max
(W)
CoPack
Pack age
aged Type
Diode