Product Overview NGTD30T120F2: IGBT 1200V 40A FS2 bare die For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 10 µs Short Circuit Capability These are Pb-Free Devices Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) NGTD30T120F2WP Pb-free NEW 1200 Halide free VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Limit 2 ed by Tj(ma x) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) 10 PD Max (W) CoPack Pack age aged Type Diode