Product Overview NGTB75N60FL2: IGBT 600V 75A FS2 Solar/UPS For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5µs Short-Circuit Capability Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode NGTB75N60FL2WG Pb-free Active 600 1.7 1 1.5 80 8 310 5 595 Yes 75 2.2 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO247