1300 nm Laser in Receptacle Package, Medium Power STM 51004X STM 51005X • • • • Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subcomponent, similar to TO 18 • SM Pigtail with optional flange Type Ordering Code Connector/Flange STM 51004G Q62702-P3001 FC / without flange STM 51004A Q62702-P3050 DIN / without flange STM 51005G Q62702-P3061 FC / with flange STM 51005A Q62702-P3056 DIN / with flange Maximum Ratings Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical to the case temperature. Parameter Symbol Values Unit Module Operating temperature range at case TC − 40 … + 85 °C Storage temperature range Tstg − 40 … + 85 °C Soldering temperature tmax = 10 s, 2 mm distance from bottom edge of case TS 260 °C Direct forward current IF max 120 mA Radiant power CW Φe 2 mW Reverse voltage VR max 2 V Laserdiode Semiconductor Group 1 02.95 STM 51004X STM 51005X Maximum Ratings (cont’d) Parameter Symbol Values Unit Monitor Diode VR max Reverse voltage 10 V Characteristics All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C. Parameter Symbol Values Unit > 1.2 mW 1280 … 1330 nm Laser Diode Optical output power Φe Emission wavelength center of range Φe = 0.5 mW λ Spectral bandwidth Φe = 0.5 mW (RMS) ∆λ <5 nm Threshold current (− 40 … + 85 °C) Ith 2 … 45 mA Forward voltage Φe = 0.5 mW VF < 1.5 V Radiant power at threshold Φeth < 40 µW Slope efficiency η 20 … 100 Differential series resistance rS <8 Ω Rise time/Fall time tR, tF <1 ns mW/A Monitor Diode Dark current, VR = 5 V, Φe = 0 IR < 500 nA Photo current, Φe = 0.5 mW IP 100 … 1000 µA Semiconductor Group 2 STM 51004X STM 51004X Laser Diode Radiant Power in Singlemode Fiber Relative Radiant Power Φe = f(λ) 1.2 100 90 Relative Optical Power Optical Power in mW 1 0.8 0.6 0.4 0.2 80 70 60 50 40 30 20 10 0 0 0 10 20 1306 1308 1310 1312 1314 30 Wavelength in nm Forward Current in mA Monitor Diode Dark Current IR = f(TA) Φport = 0, VR = 5 V Laser Forward Current IF = f(VF) 1000 100 100 80 Dark Current in nA Forward Current in mA 90 70 60 50 40 30 10 1 0.1 20 10 0.01 0 0 0.4 0.8 1.2 -50 1.6 50 Temperature in °C Forward Voltage in V Semiconductor Group 0 3 100 STM 51004X STM 51005X Package Outlines (Dimensions in mm) STM 51004X STM 51005X (with flange) Semiconductor Group 4