Pr el im in ar y Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com Pr el im in ar y THIS PAGE INTENTIONALLY LEFT BLANK HMC907ALP5E v00.1115 Features The HmC907Alp5e is ideal for: High P1dB Output Power: +26 dBm • Test Instrumentation High Gain: 12 dB • Microwave Radio & VSAT High Output IP3: +36 dBm • Military & Space Single Supply: +10 V @ 350 mA • Telecom Infrastructure 50 Ohm Matched Input/Output • Fiber Optics 32 Lead 5x5 mm SMT Package: 25 mm² Functional Diagram General Description y Typical Applications Electrical Specifications, TA = +25 °C, Vdd = +10 V, Idd = 350 mA Parameter Min. Frequency Range Gain Typ. Max. Min. 0.2 - 10 10 Typ. Max. Min. 10 - 18 12 10 11.5 10 Typ. Max. Units 18 - 22 GHz 11.5 dB Gain Flatness ±0.7 ±0.6 ±0.7 dB Gain Variation Over Temperature 0.01 0.013 0.014 dB/ °C dB Input Return Loss 15 9 8 Output Return Loss 13 12 8 dB 21.5 dBm 27 24.5 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 1 The HmC907Alp5e is a GaAs mmiC pHemT Distributed power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 12 dB of gain, +36 dBm output ip3 and +26 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HmC907Alp5e ideal for ew, eCm, radar and test equipment applications. The HmC907Alp5e amplifier i/os are internally matched to 50 ohms facilitating integration into mutli-Chip-modules (mCms) and is packaged in a leadless Qfn 5x5 mm surface mount package, and requires no external matching components. in ar im Pr el Amplifiers - Linear & Power - SMT 1 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz 23 26 21 28.5 25 19.5 Output Third Order Intercept (IP3) 36 34 31 dBm Noise Figure 3.5 3.5 4 dB Supply Current (Idd) (Vdd= 10V) 350 400 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 350 400 350 400 mA For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC907ALP5E v00.1115 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Typical Supply Current vs. Vdd +11 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +11V) +20 dBm +8 335 Channel Temperature 150 °C Drain Bias Voltage (Vdd) 4.1 W Thermal Resistance (channel to ground paddle) 15.9 °C/W Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C ESD Sensitivity (HBM) Class 1A +9 343 +10 350 +11 357 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Pr el im Outline Drawing in ar y Continuous Pdiss (T= 85 °C) (derate 63 mW/°C above 85 °C) NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 2 Amplifiers - Linear & Power - SMT Absolute Maximum Ratings 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2