Pr el im in ar y Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com Pr el im in ar y THIS PAGE INTENTIONALLY LEFT BLANK HMC907A v00.1115 Features The HMC907A is ideal for: High P1dB Output Power: +27 dBm • Test Instrumentation High Gain: 14 dB • Microwave Radio & VSAT High Output IP3: +38 dBm • Military & Space Single Supply: +10V @ 350 mA • Telecom Infrastructure 50 Ohm Matched Input/Output • Fiber Optics Die Size: 2.91 x 1.33 x 0.1 mm Functional Diagram General Description im in ar y Typical Applications Pr el AMPLIFIERS - LINIAR & POWER - CHIP GaAs pHEMPT MMIC POWER AMPLIFIER, 0.2 - 22 GHz The HMC907A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, 38 dBm output IP3 and +27 dBm of output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is excellent at ±0.6 dB from DC to 12 GHz making the HMC907A ideal for EW, ECM, Radar and test equipment applications. The HMC907A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length. Electrical Specifications, TA = +25 °C, Vdd = +10V, Idd = 350mA Parameter Min. Frequency Range Gain Max. Min. 12 13.5 Typ. Max. Min. 8 - 16 12 13.5 12.5 Typ. Max. Units 16 - 22 GHz 14 dB Gain Flatness ±0.6 ±0.5 ±0.3 dB Gain Variation Over Temperature 0.008 0.008 0.009 dB/ °C dB Input Return Loss 15 15 15 Output Return Loss 15 20 15 dB 25.5 dBm 28.5 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 1 Typ. 0.2 - 8 23 26 28.5 25 27 29.5 23 Output Third Order Intercept (IP3) 37 38 37 dBm Noise Figure 3.5 2.5 3.0 dB Supply Current (Idd) (Vdd= 10V) 350 350 350 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC907A v00.1115 GaAs pHEMPT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +11 Vdc RF Input Power (RFIN)(Vdd = +11V) Channel Temperature Vdd (V) Idd (mA) +20 dBm +9 350 150 °C +10 350 +11 350 4.1 W Thermal Resistance (channel to die bottom) 15.8 °C/W Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS im Outline Drawing in ar y Continuous Pdiss (T= 85 °C) (derate 63 mW/°C above 85 °C) Pr el AMPLIFIERS - LINIAR & POWER - CHIP Absolute Maximum Ratings This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area. 2 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D