Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC907LP5E v00.0510 Amplifiers - Linear & Power - SMT 9 Typical Applications Features The HMC907LP5E is ideal for: High P1dB Output Power: +26 dBm • Test Instrumentation High Gain: 12 dB • Microwave Radio & VSAT High Output IP3: +36 dBm • Military & Space Single Supply: +10 V @ 350 mA • Telecom Infrastructure 50 Ohm Matched Input/Output • Fiber Optics 32 Lead 5x5 mm SMT Package: 25 mm² Functional Diagram General Description The HMC907LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HMC907LP5E ideal for EW, ECM, Radar and test equipment applications. The HMC907LP5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs) and is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components. Electrical Specifications, TA = +25 °C, Vdd = +10 V, Idd = 350 mA Parameter Min. Frequency Range Gain Typ. Max. Min. 0.2 - 10 10 Typ. Max. Min. 10 - 18 12 10 11.5 10 Typ. Max. Units 18 - 22 GHz 11.5 dB Gain Flatness ±0.7 ±0.6 ±0.7 dB Gain Variation Over Temperature 0.01 0.013 0.014 dB/ °C dB Input Return Loss 15 9 8 Output Return Loss 13 12 8 dB 21.5 dBm 27 24.5 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 9-1 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz 23 26 21 28.5 25 19.5 Output Third Order Intercept (IP3) 36 34 31 dBm Noise Figure 3.5 3.5 4 dB Supply Current (Idd) (Vdd= 10V) 350 400 350 400 350 400 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC907LP5E v00.0510 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Gain vs. Temperature 20 16 10 14 -10 -20 12 +25C +85C -40C 8 -30 6 0 5 10 15 20 25 30 0 4 FREQUENCY (GHz) 0 -10 -10 RETURN LOSS (dB) RETURN LOSS (dB) 12 16 20 24 Output Return Loss vs. Temperature 0 -20 -30 8 FREQUENCY (GHz) Input Return Loss vs. Temperature +25C +85C -40C -40 -20 +25C +85C -40C -30 -40 0 4 8 12 16 20 24 0 4 FREQUENCY (GHz) 8 12 16 20 24 20 24 FREQUENCY (GHz) Gain vs. Vdd Reverse Isolation vs. Temperature 16 0 -10 14 +25C +85C -40C -20 GAIN (dB) ISOLATION (dB) 9 10 -30 Amplifiers - Linear & Power - SMT S21 S11 S22 0 GAIN (dB) RESPONSE (dB) Gain & Return Loss 12 10 -40 +8V +9V +10V +11V 8 -50 6 -60 0 4 8 12 16 FREQUENCY (GHz) 20 24 0 4 8 12 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-2 HMC907LP5E v00.0510 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Noise Figure 10 10 8 NOISE FIGURE (dB) 20 S21 S11 S22 0 -10 -20 6 4 0 0.01 0.1 1 10 0 4 FREQUENCY (GHz) 28 28 26 26 24 24 P1dB (dBm) P1dB (dBm) 30 22 +25C +85C -40C 18 12 16 20 24 20 24 20 24 P1dB vs. Vdd 30 20 8 FREQUENCY (GHz) P1dB vs. Temperature 22 20 +8V +9V +10V +11V 18 16 16 14 14 0 4 8 12 16 20 24 0 4 FREQUENCY (GHz) 12 16 Psat vs. Vdd 34 32 32 30 30 28 28 Psat (dBm) 34 26 24 8 FREQUENCY (GHz) Psat vs. Temperature +25C +85C -40C 22 26 24 22 20 +8V +9V +10V +11V 20 18 18 0 4 8 12 16 FREQUENCY (GHz) 9-3 +25C +85C -40C 2 -30 0.001 Psat (dBm) Amplifiers - Linear & Power - SMT 9 RESPONSE (dB) Low Frequency Gain & Return Loss 20 24 0 4 8 12 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC907LP5E v00.0510 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Output IP3 vs. Vdd @ Pout = 16 dBm / Tone 40 40 38 38 36 36 34 34 32 30 +25C +85C -40C 28 32 30 26 26 24 24 22 22 0 4 8 12 16 20 24 0 4 8 FREQUENCY (GHz) 16 20 24 Output IM3 @ Vdd = 9V 70 70 60 60 2 GHz 10 GHz 18 GHz 22 GHz 2 GHz 10 GHz 18 GHz 22 GHz 50 IM3 (dBc) 50 IM3 (dBc) 12 FREQUENCY (GHz) Output IM3 @ Vdd = 8V 40 30 40 30 20 20 10 10 0 0 10 12 14 16 18 20 22 24 10 12 14 Pout/TONE (dBm) 16 18 20 22 24 Pout/TONE (dBm) Output IM3 @ Vdd = 11V Output IM3 @ Vdd = 10V 70 70 60 60 2 GHz 10 GHz 18 GHz 22 GHz 2 GHz 10 GHz 18 GHz 22 GHz 50 IM3 (dBc) 50 IM3 (dBc) 9 +8V +9V +10V +11V 28 40 30 40 30 20 20 10 10 0 Amplifiers - Linear & Power - SMT IP3 (dBm) IP3 (dBm) Output IP3 vs. Temperature @ Pout = 16 dBm / Tone 0 10 12 14 16 18 Pout/TONE (dBm) 20 22 24 10 12 14 16 18 20 22 24 Pout/TONE (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-4 HMC907LP5E v00.0510 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Gain & Power Supply vs. Supply Current @ 10 GHz Power Compression @ 10 GHz 35 Gain (dB), P1dB (dBm), Psat (dBm) 28 Pout Gain PAE 24 20 16 12 8 4 0 3 6 9 12 15 18 25 Gain (dB) P1dB (dBm) Psat (dBm) 20 15 8 21 9 6 70 5 60 SECOND HARMONIC (dBc) POWER DISSIPATION (W) 11 Second Harmonics vs. Temperature @ Pout = 16 dBm, Vdd = 10V Power Dissipation 4 3 2 GHz 10 GHz 20 GHz Max Pdiss @ 85C 2 10 Vdd (V) INPUT POWER (dBm) 1 +25C +85C -40C 50 40 30 20 10 0 0 0 4 8 12 16 20 0 4 INPUT POWER (dBm) 8 12 16 20 24 FREQUENCY(GHz) Second Harmonics vs. Vdd @ Pout = 16 dBm Second Harmonics vs. Pout @ Vdd = 10V 70 70 60 50 SECOND HARMONIC (dBc) +8V +9V +10V +11V 40 30 20 10 +8 dBm +10 dBm +12 dBm +14 dBm +16 dBm +18 dBm 60 50 40 30 20 10 0 0 0 4 8 12 16 FREQUENCY(GHz) 9-5 30 10 0 SECOND HARMONIC (dBc) Amplifiers - Linear & Power - SMT 9 Pout (dBm), GAIN (dB), PAE (%) 32 20 24 0 4 8 12 16 20 24 FREQUENCY(GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC907LP5E v00.0510 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Typical Supply Current vs. Vdd +11 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +11V) +20 dBm +8 335 Channel Temperature 150 °C Drain Bias Voltage (Vdd) Continuous Pdiss (T= 85 °C) (derate 63 mW/°C above 85 °C) 4.1 W Thermal Resistance (channel to ground paddle) 15.9 °C/W Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C ESD Sensitivity (HBM) Class 1A +9 343 +10 350 +11 357 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 9 Amplifiers - Linear & Power - SMT Absolute Maximum Ratings 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. Package Information Part Number Package Body Material Lead Finish HMC907LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H907 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-6 HMC907LP5E v00.0510 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Pin Descriptions Amplifiers - Linear & Power - SMT 9 Pin Number Function Description 1, 4, 6, 8, 9, 16, 17, 20, 22, 24, 25, 32 GND Package bottom has exposed metal paddle that must be connected to RF/DC ground. 2, 3, 7, 10 - 15, 18, 19, 23, 26 - 31 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 5 RFIN This pin is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 21 RFOUT & Vdd RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Interface Schematic Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 9-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC907LP5E v00.0510 GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Evaluation PCB List of Materials for Evaluation PCB 130812 [1] Item Description J1, J2 SMA Connector U1 HMC907LP5E Power Amplifier PCB [2] 109765 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT 9 9-8