BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1 = 2.2kΩ, R2 = 47kΩ Tape loading orientation Type Marking Ordering Code Pin Configuration BCR 48PN WTs Package Q62702-C2496 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Unit V Emitter-base voltage NPN VEBO 10 Emitter-base voltage PNP VEBO 5 DC collector current NPN IC 70 DC collector current PNP IC 100 Input on voltage NPN Vi(on) 50 Input on voltage PNP Vi(on) 10 Total power dissipation, TS = 115°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg mA V - 65 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / Semiconductor Group 0.5cm2 RthJA ≤ 275 RthJS ≤ 140 K/W Cu 1 Dec-09-1996 BCR 48PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics for NPN Type Collector-emitter breakdown voltage V(BR)CEO IC = 100 µA, IB = 0 Collector-base breakdown voltage nA - 100 µA - 164 hFE 70 - - VCEsat mV - - 0.3 Vi(off) IC = 100 µA, VCE = 5 V Input on Voltage - - IC = 10 mA, IB = 0.5 mA Input off voltage 50 IEBO IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) - - VEB = 10 V, IC = 0 DC current gain - ICBO VCB = 40 V, IE = 0 Emitter cutoff current 50 V(BR)CBO IC = 100 µA, IB = 0 Collector cutoff current V V 0.8 - 1.5 1 - 3 Vi(on) IC = 2 mA, VCE = 0.3 V Input resistor R1 32 47 62 kΩ Resistor ratio R1/R2 0.9 1 1.1 - AC Characteristics for NPN Type Transition frequency fT IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance MHz - 100 - Ccb VCB = 10 V, f = 1 MHz pF - 3 - 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Dec-09-1996 BCR 48PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics for PNP Type Collector-emitter breakdown voltage V(BR)CEO IC = 100 µA, IB = 0 Collector-base breakdown voltage nA - - 100 - - 164 - - - VCEsat V - - 0.3 0.4 - 0.8 0.5 - 1.1 Vi(off) IC = 100 µA, VCE = 5 V Input on voltage - 70 IC = 10 mA, IB = 0.5 mA Input off voltage 50 hFE IC = 5 mA, VCE = 5 V, BC ... 16 W Collector-emitter saturation voltage 1) - IEBO VEB = 5 V, IC = 0 DC current gain - ICBO VCB = 40 V, IE = 0 Emitter cutoff current 50 V(BR)CBO IC = 100 µA, IB = 0 Collector cutoff current V Vi(on) IC = 2 mA, VCE = 0.3 V Input resistor R1 1.5 2.2 2.9 kΩ Resistor ratio R1/R2 0.042 0.047 0.052 - AC Characteristics for PNP Type Transition frequency fT IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance MHz - 200 - Ccb VCB = 10 V, f = 1 MHz pF - 3 - 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 3 Dec-09-1996 BCR 48PN NPN TYPE DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 2 10 3 - hFE IC mA 10 2 10 1 10 1 10 0 -1 10 10 0 10 1 10 2 10 0 0.0 mA 0.2 0.4 0.6 V IC Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) 1.0 V CEsat Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA IC IC 10 0 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 10 -3 0 V V i(on) Semiconductor Group 1 2 3 V 5 V i(off) 4 Dec-09-1996 BCR 48PN PNP TYPE DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 2 10 3 - hFE IC mA 10 2 10 1 10 1 10 0 -1 10 10 0 10 1 10 0 0.0 mA 0.1 0.2 0.3 V IC Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) 0.5 V CEsat Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA IC IC 10 0 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 10 -3 0.1 V V i(on) Semiconductor Group 5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0 V i(off) Dec-09-1996 BCR 48PN Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 300 mW Ptot TS 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load Ptotmax / PtotDC = f(tp) 10 3 10 3 K/W - RthJS Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 Semiconductor Group 10 -4 10 -3 10 10 1 -2 -1 10 s 10 tp 0 6 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-09-1996