BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ) Type Marking Ordering Code Pin Configuration BCR 169 WSs 1=B Q62702-C2340 Package 2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on Voltage Vi(on) 15 DC collector current IC 100 mA Total power dissipation, TS = 102°C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature Tstg V - 65 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 350 RthJS ≤ 240 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-27-1996 BCR 169 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 100 µA, IB = 0 Collector-base breakdown voltage 5 - nA - 100 - - 630 VCEsat V - - 0.3 0.4 - 0.8 0.5 - 1.1 3.2 4.7 6.2 Vi(off) Vi(on) IC = 2 mA, VCE = 0.3 V Input resistor - 120 IC = 100 µA, VCE = 5 V Input on Voltage - hFE IC = 50 mA, IB = 2.5 mA Input off voltage 50 - IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) - ICBO VCB = 40 V, IE = 0 DC current gain - V(BR)EBO IE = 10 µA, IC = 0 Collector cutoff current 50 V(BR)CBO IC = 10 µA, IB = 0 Base-emitter breakdown voltage V R1 kΩ AC Characteristics Transition frequency fT IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance MHz - 200 - Ccb VCB = 10 V, f = 1 MHz pF - 3 - 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Nov-27-1996 BCR 169 DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 3 10 2 - mA hFE IC 10 2 10 1 10 1 10 0 10 0 -1 10 10 0 10 1 10 -1 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V 0.50 V CEsat mA IC Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 2 10 2 mA mA IC IC 10 1 10 1 10 0 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 10 -3 0 V V i(on) Semiconductor Group 1 2 3 V 5 V i(off) 3 Nov-27-1996 BCR 169 Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 300 mW Ptot 200 TS TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load Ptotmax / PtotDC = f(tp) 10 3 10 3 K/W - RthJS Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 Semiconductor Group 10 -4 10 -3 10 10 1 -2 -1 10 s 10 tp 0 4 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Nov-27-1996