INFINEON BGA416

Data sheet, BGA416, June 2002
BGA 416
R F C a s c o d e A m p l i f ie r
MMIC
W ir e le ss
Si l ic o n D is c r e t e s
N e v e r
s t o p
t h i n k i n g .
Edition 2002-06-14
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA416
Data sheet
Revision History:
2002-06-14
Previous Version:
2001-10-30
Page
Subjects (major changes since last revision)
Preliminary status removed
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
[email protected]
RF Cascode Amplifier
BGA416
Features
3
• GMA = 23dB at 900MHz
• Ultra high reverse isolation,
62 dB at 900MHz
• Low noise figure,
F50Ω = 1.3dB at 900MHz
• On chip bias circuitry,
5.5 mA bias current at VCC = 3V
• Typical supply voltage: 2.5 to 5.0V
• SIEGET®-25 technology
4
2
1
VPS05178
Applications
• Buffer amplifiers
• LNAs
• Oscillator active devices
Description
GND, 1
BGA416 is a monolithic silicon cascode
amplifier with high reverse isolation. A
bias network is integrated for simplified
biasing.
Bias
RFout, 4
RFin, 2
GND, 3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Marking
Chip
BGA416
SOT143
C1s
T0553
Data sheet
4
BGA416
Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage at pin RFout
VOUT
6
V
Current into pin RFin
IIN
0.5
mA
Device current 1)
ID
20
mA
Input power
PIN
8
dBm
Total power dissipation, TS < 123°C 2)
Ptot
100
mW
Junction temperature
Tj
150
°C
Ambient temperature range
TA
-65 ... +150
°C
Storage temperature range
TSTG
-65 ... +150
°C
Thermal resistance: junction-soldering point
Rth JS
270
K/W
Notes:
All Voltages refer to GND-Node
1)
Device current is equal to current into pin RFout
2)
TS is measured on the ground lead at the soldering point
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1)
VCC=3V, unless otherwise specified
Parameter
Symbol
min.
typ.
max.
Unit
Maximum available power gain f=0.9GHz
f=1.8GHz
GMA
23
14
dB
Insertion power gain
f=0.9GHz
f=1.8GHz
|S21|2
17
11
dB
Reverse isolation
f=0.9GHz
f=1.8GHz
|S12|
62
40
dB
Noise figure (ZS=50Ω)
f=0.9GHz
f=1.8GHz
F50Ω
1.3
1.6
dB
Output power at 1dB gain compression
f=0.9GHz
(ZS=ZL=50Ω)
f=1.8GHz
P-1dB
Output third order intercept point
f=0.9GHz
(ZS=ZL=50Ω)
f=1.8GHz
OIP3
dBm
14
14
Device current
Data sheet
dBm
-3
-3
ID
5
5.5
mA
BGA416
Reference Plane
In
GND
Bias-T
RFin
VCC
N.C.
ID
Bias-T
RFout
GND
Out
Reference Plane
Top View
Fig. 1: Test Circuit for Electrical Characteristics and S-Parameter
S-Parameter VCC=3V, ID=5.5mA (see Electrical Characteristics for conditions)
Frequency S11
[GHz]
Mag
S11
Ang
S21
Mag
S21
Ang
S12
Mag
S12
Ang
S22
Mag
S22
Ang
0.1
0.7881
-6.9
12.1310
166.8
0.0017
10.9
0.8974
-4.9
0.2
0.7832
-13.3
11.9280
156.0
0.0004
-16.6
0.8895
-9.0
0.4
0.6986
-23.8
10.3940
134.3
0.0009
41.6
0.8708
-17.5
0.6
0.6335
-31.4
8.9867
116.3
0.0016
20.7
0.8489
-25.7
0.8
0.5666
-37.3
7.5805
100.8
0.0006
-5.4
0.8143
-34.2
1.0
0.5158
-41.6
6.4187
87.7
0.0006
-7.2
0.7776
-42.1
1.2
0.4744
-44.5
5.4350
76.6
0.0014
-103.4
0.7257
-49.6
1.4
0.4503
-47.4
4.6957
66.2
0.0034
-132.9
0.6850
-56.7
1.6
0.4272
-50.4
4.0607
57.5
0.0059
-143.2
0.6530
-64.0
1.8
0.4204
-53.3
3.5686
49.2
0.0092
-152.6
0.6195
-71.1
2.0
0.4056
-56.4
3.1353
41.0
0.0129
-156.9
0.5867
-78.2
2.4
0.4071
-63.5
2.4957
26.7
0.0233
-170.1
0.5298
-92.9
3.0
0.4168
-78.1
1.7687
6.0
0.0465
171.9
0.4562
-117.4
4.0
0.4615
-110.1
0.9839
-24.7
0.1017
143.4
0.3892
-163.8
5.0
0.5467
-148.7
0.4451
-46.1
0.1758
113.0
0.3894
152.0
6.0
0.6187
176.8
0.1983
-21.9
0.2483
84.2
0.4008
120.6
Data sheet
6
BGA416
2
Power Gain |S | , G = f(f)
21
ma
V = 3V, I = 5.5mA
CC
Matching |S |, |S | = f(f)
11
22
V = 3V, I = 5.5mA
D
CC
40
D
0
S22
−1
35
G
ma
−2
30
22
|S |, |S | [dB]
20
|S21|2
15
−4
S11
−5
11
|S21|2, Gma [dB]
−3
25
−6
−7
10
−8
5
−9
0
−10
0
1
2
3
4
0
1
Frequency [GHz]
Reverse Isolation |S12| = f(f)
V = 3V, I = 5.5mA
CC
2
3
4
Frequency [GHz]
Noise figure F = f(f)
V = 3V, I = 5.5mA
CC
D
Z =50Ω
D
S
0
3
−10
2.5
−20
2
F [dB]
|S12| [dB]
−30
−40
1.5
−50
1
−60
0.5
−70
−80
0
0
1
2
3
4
0
Frequency [GHz]
Data sheet
0.5
1
1.5
2
Frequency [GHz]
7
2.5
3
BGA416
Device Current I
= f(V
D
)
CC
12
11
10
9
8
I D [mA]
7
6
5
4
3
2
1
0
0
1
2
3
V
CC
4
5
[V]
Package Outline
1.1 MAX.
2.9 ±0.1
B
1.9
10˚ MAX.
1.3 ±0.1
2.6 MAX.
+0.2
acc. to
DIN 6784
10˚ MAX.
0.1 MAX.
A
+0.1
0.8 -0.05
0.55 -0.1
0.4 +0.1
-0.05
0.08...0.15
1.7
0.25
M
B
2˚... 30˚
0.20
Data sheet
M
A
8