INFINEON BGF111

D a t a S h e e t , V 2. 0 , M ay 2 00 8
B G F 11 1
T V - O u t F i l t e r a n d E S D P r o t e c t i on
S m a l l S i g n a l D i s c r et e s
Edition 2008-05-28
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
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disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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question please contact your nearest Infineon Technologies Office.
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BGF111
TV-Out Filter
BGF111
Revision History: 2008-05-28, V2.0
Previous Version: 2007-04-26
Page
Subjects (major changes since last revision)
All
Preliminary status removed
Data Sheet
3
V2.0, 2008-05-28
BGF111
TV-Out Filter
BGF111
BGF111
Features
• TV-Out Filter
• Wafer level package with SnAgCu solder balls
• Integrated ESD protection up to 15 kV contact discharge according to
IEC61000-4-2
• Low bias voltage dependency of low pass frequency
• RoHS and WEEE compliant package
WLP-4-1-3D
Description
BGF111 is a 75 Ω TV-Out filter with low pass characteristic offering a high stop band attenuation up to 6 GHz in mobile phone,
consumer and IT applications. Wafer technology is optimized to provide low variation of the low pass frequency versus bias
voltage. ESD protection at both pins exceeds 15 kV contact discharge according to IEC61000-4-2. The wafer level package is
a green leadfree package with a size of only 0.75 mm x 0.75 mm and a total height of 0.6 mm.
Type
Package
Marking
Chip
BGF111
WLP-4-1
11
N0724
Table 1
Maximum Ratings
Parameter
Symbol
Voltage at all pins to GND
Operating temperature range
Storage temperature range
DC current A1 to B1
TOP
TSTG
Imax
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
0
–
5
V
–
-40
–
85
°C
–
-65
–
150
°C
–
–
–
35
mA
–
-15
–
+15
kV
–
Unit
Electrostatic Discharge According to IEC61000-4-2
Contact discharge between all pins
Table 2
VESD
Electrical characteristics at TA = 25°C
Parameter
Min.
Typ.
Max.
Note /
Test Condition
71.25
75
78.75
–
Leakage currents, A1 or B1 to GND
R1
IR
–
–
0.1
0.1
120
120
nA
µA
Line capacitance to GND
CL
–
44
–
pF
Insertion loss at 0 V bias voltage
Pin A1 to B1
IL
–
30
–
dB
Resistor R1
Data Sheet
Symbol
4
Values
VR = ±3 V
VR = ±14 V
V=0V
f = 0.8... 2 GHz,
ZS = ZL = 75 Ω
V2.0, 2008-05-28
BGF111
TV-Out Filter
BGF111
Int. IO
Ext. IO
R1
75 Ohm
A1
D1
B1
D2
A2 (GND)
B2 (GND)
bgf111 _schematic
Figure 1
Schematic
Insertion Loss BGF111 S21=f(freq, Ubias)
0
-5
S21 [dB]
-10
-15
dB(S21@0V)
-20
dB(S21@3V)
-25
-30
-35
-40
1
10
100
1000
10000
f [MHz]
bgf111_Insertion_Loss
Figure 2
Data Sheet
Insertion loss as function of bias voltage, ZS = ZL = 75 Ω
5
V2.0, 2008-05-28
BGF111
TV-Out Filter
BGF111
Package Outline
0.75 ±0.05
A1
B2
B1
4x
0.25 ±0.04 1)
ø0.05 M A B
C
0.08 C
4x
COPLANARITY
A
0.75 ±0.05
A2
(0.175 ±0.05 )
(0.175 ±0.05 )
(0.175 ±0.05 )
SEATING PLANE 3)
(0.175 ±0.05 )
0.1 C
0.4
0.2 ±0.05
STANDOFF
Pin A1
Corner Index Area 2)
B
0.4
0.6 ±0.05
1) Dimension is measured at the maximum solder ball diameter, parallel to primary datum C
2) A1 corner identified by marking
3) Primary datum C and seating plane are defined by the domed crowns of the balls
WLP-4-1-PO-N V02
Figure 3
Package outline
Tape for BGF111
4 ±0.1
Pin 1
Corner Index Area
Figure 4
0.85 ±0.05
8 ±0.1
0.85 ±0.05
0.25
0.65
WLP-4-1-TP V05
Tape for BGF111 / WLP-4-1
You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”:
http://www.infineon.com/products.
Data Sheet
6
V2.0, 2008-05-28