INFINEON BGA428

B G A 4 2 8 , M a rc h 2 0 0 2
BGA 428
BGA428 High Gain, Low Noise
Amplifier
MMIC
W ir e le ss
S i l ic o n D is c r e t e s
N e v e r
s t o p
t h i n k i n g .
Edition 2002-03-26
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
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approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
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BGA428
Data sheet
Revision History:
2002-03-26
Previous Version:
2000-11-15
Page
Subjects (major changes since last revision)
4
dot size for pin 1 package marking increased
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
BGA428 High Gain, Low Noise Amplifier
BGA428
Features
•
•
•
•
•
•
•
4
High gain, GMA=20dB at 1.8GHz
Low noise figure, NF=1.4dB at 1.8GHz
Prematched
Ideal for GSM, DCS1800, PCS1900
Open collector output
Typical supply voltage: 2.4-3V
SIEGET®-45 technology
5
6
2
3
1
VPS05604
Tape loading orientation
Top View
6 5 4
Marking on SOT-363 package
(for example PGs)
corresponds to pin 1 of device
PGs
1 2 3
Position in tape: pin 1
opposite of feed hole side
Direction of Unreeling
EHA07193
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Marking
Chip
BGA428
SOT363
PGs
T0527
Data sheet
4
2002-03-26
BGA428
Maximum Ratings
Parameter
Symbol
Value
Unit
VCC
4
V
Itot
12
mA
VOut
4
V
Current into pin In
IIN
0.5
mA
Voltage at pin GS
VGS
3.5
V
Ptot
50
mW
Tj
150
°C
TOP
-40 ..+85
°C
Storage temperature range
TSTG
-65 ... +150
°C
Thermal resistance: junction-soldering point
Rth JS
220
K/W
PIN
8
dBm
Device voltage
Total Device Current3)
Voltage at pin Out
Total power dissipation, Ts < 125°C
1)
Junction temperature
Operating temperature range
Input power2)
Notes:
All Voltages refer to GND-Node
1)
Ts is measured on the ground lead at the soldering point
2)
Valid for a) ZL=50Ω and ZS=50Ω,=VCC=2.7V, VOUT=2.7V, VGS=0.0V, GND=0.0V
and b) ZL=50Ω and ZS=50Ω,=VCC=0.0V, VOUT=0.0V, VGS=2.7V, GND=0.0V
3)
Itot= Current into OUT + Current into VCC
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1)
VCC=2.7V, Frequency=1.8GHz, unless otherwise specified
Parameter
Symbol
Maximum available power gain
GMA
Noise figure (ZS=50Ω)
min.
typ.
20
max.
Unit
dB
NF
1.4
dB
Input power at 1dB gain compression
P-1dB
-19
dBm
Input third order intercept point
IIP3
-9
dBm
Total device current
Itot
8.2
mA
Insertion loss in gain-step-mode
Vcc=0.0V, VCTRL=2.7V, RCTRL=3kΩ
LGS
13.5
dB
Data sheet
5
2002-03-26
BGA428
Reference Plane
VCTRL
RCTRL=3kΩ
GS
Bias-T
OUT
Out
GND
Bias-T
In
IN
VCC
Reference Plane
Top View
47pF
180pF
100nF
2.7V
Fig.1: Test Circuit for Electrical Characteristics and S-Parameter
47pF
180pF
VCTRL
Supply
3kΩ
GS
Vcc
3.9nH
RFin
150pF
In
BGA428
Out
0.9pF
RFout
GND
Fig. 2: Application Circuit for 1850MHz
Data sheet
6/9
2002-03-26
BGA428
S-Parameter at 2.7V (see Electrical Characteristics for conditions)
Freq.
[GHz]
S11
Mag
S11
Ang
S21
Mag
S21
Ang
S12
Mag
S12
Ang
S22
Mag
S22
Ang
0.100
0.6756
-31.7
58.775
-19.6
0.0005
153.5
0.9491
-3.9
0.200
0.5936
-53.6
47.806
-43.1
0.0014
138.4
0.9327
-6.3
0.300
0.5150
-71.4
39.232
-59.5
0.0021
119.0
0.9174
-8.3
0.400
0.4587
-86.6
32.740
-71.8
0.0028
104.9
0.9035
-10.3
0.600
0.4004
-110.7
23.868
-89.6
0.0042
105.9
0.8807
-14.0
0.800
0.3743
-129.1
18.509
-103.2
0.0063
94.3
0.8593
-17.7
1.000
0.3743
-143.0
14.825
-114.5
0.0082
92.4
0.8352
-21.4
1.200
0.3816
-154.5
12.288
-124.7
0.0093
87.2
0.8116
-25.1
1.400
0.3922
-164.4
10.353
-134.2
0.0110
85.3
0.7865
-28.7
1.600
0.4086
-172.4
8.879
-143.2
0.0132
79.4
0.7597
-32.2
1.800
0.4265
-178.9
7.732
-151.4
0.0141
79.4
0.7309
-36.0
1.900
0.4314
178.8
7.214
-155.2
0.0146
76.1
0.7199
-37.5
2.000
0.4371
176.1
6.771
-159.1
0.0150
77.0
0.7097
-39.1
2.200
0.4505
171.2
5.976
-166.6
0.0169
75.2
0.6791
-42.3
2.400
0.4640
167.2
5.298
-173.5
0.0181
73.2
0.6593
-45.6
3.000
0.4935
155.9
3.935
167.0
0.0217
68.3
0.5925
-53.3
4.000
0.5181
141.2
2.605
139.2
0.0282
65.1
0.5284
-64.9
5.000
0.5202
126.9
1.911
113.6
0.0319
62.2
0.4829
-75.1
6.000
0.5128
110.0
1.479
89.9
0.0489
56.0
0.4323
-81.7
Application Circuit Characteristics (measured in test circuit specified in fig. 2)
TA=25°C, Vcc=2.7V, Frequency=1.85GHz, unless otherwise specified
Parameter
Symbol
typ.
Unit
|S21|
19
dB
NF
1.4
dB
Input Power at 1dB Gain Compression
P-1dB
-19
dBm
Input Third Order Intercept Point
IIP3
-9
dBm
Total Device Current
Itot
8.2
mA
Insertion Loss in Gain-Step-Mode
Vcc=0.0V, VCTRL=2.7V, RCTRL=3kΩ
LGS
13.5
dB
2
Insertion power gain
Noise Figure (ZS=50Ω)
The following data refers to the application circuit given in fig. 2
Data sheet
7/9
2002-03-26
BGA428
2
2
Power Gain |S21| =f(f)
V = 2.7V, V =2.7V
CC
Power Gain |S21| =f(f)
V = 2.7V, V =2.7V
Out
CC
20
23
15
22
10
21
5
Insertion Gain [dB]
Insertion Gain [dB]
Out
0
−5
20
19
18
−10
17
−15
16
−20
−25
0
1
2
3
4
5
15
1.7
6
1.8
Frequency [GHz]
2
Off−Gain |S | =f(V
)
21
CTRL
V = 0.0V, V =0.0V,R
CC
Out
1.9
2
2.1
2.5
3
Frequency [GHz]
Matching |S |,|S |=f(f)
11
22
V = 2.7V, V =2.7V
=2.7kΩ
CC
CTRL
−10
Out
0
S22
−11
−5
−12
1800MHz
S
11
−10
−14
|S11|, |S22| [dB]
Insertion Gain [dB]
−13
1990MHz
−15
−16
−15
−20
−17
−18
−25
−19
−20
−30
2
2.2
2.4
2.6
V
CTRL
Data sheet
2.8
3
3.2
1
1.5
2
Frequency [GHz]
[V]
8/9
2002-03-26
BGA428
Input Compression Point P−1dB=f(f)
Device Current I=f(ϑ)
V =2.7V, V =2.7V
CC
−16.5
Out
9
8.8
−17
8.4
Device Current [mA]
Input Compression Point [dBm]
8.6
−17.5
VCC=2.7V
−18
−18.5
VCC=2.85V
8.2
8
7.8
7.6
−19
VCC=2.4V
7.4
−19.5
7.2
−20
1800
1850
1900
1950
7
−20
2000
0
Frequency [MHz]
20
40
60
80
Temperature [°C]
Package Outline
2
Insertion Gain |S | =f(ϑ)
21
VCC=2.7V, VOut=2.7V
2 ±0.2
25
0.9 ±0.1
B
0.2 +0.1
0.1 max
A
24
5
4
1
2
3
23
+0.2
acc. to
DIN 6784
±0.1
6
22
|S21|2 [dB]
21
f=1800MHz
1.3 ±0.1
19
0.15 +0.1
-0.05
0.65 ±0.05
20
0.20
M
B
0.20
M
A
GPS05604
f=1990MHz
18
17
16
15
−20
0
20
40
60
80
Temperature [°C]
Data sheet
9/9
2002-03-26