TN2640 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
TN2640
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally induced
secondary breakdown.
►► Low threshold (2.0V max.)
►► High input impedance
►► Low input capacitance
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
Applications
►► Logic level interfaces - ideal for TTL and CMOS
►► Solid state relays
►► Battery operated systems
►► Photo voltaic drives
►► Analog switches
►► General purpose line drivers
►► Telecom switches
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Product Summary
Part Number
Package Option
Packing
TN2640K4-G
TO-252 (D-PAK)
2000/Reel
TN2640LG-G
8-Lead SOIC
2500/Reel
TN2640N3-G
3-Lead TO-92
1000/Bag
TN2640N3-G P002
BVDSS/BVDGS
400V
RDS(ON)
ID(ON)
(max)
(min)
5.0Ω
2.0A
2000/Reel
TN2640N3-G P013
TN2640N3-G P015
DRAIN
SOURCE
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
-55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Doc.# DSFP-TN2640
C071913
8-Lead SOIC
TO-252 (D-PAK)
Absolute Maximum Ratings
Operating and storage temperature
GATE
SOURCE
N/C
N/C
SOURCE
GATE
For packaged products, -G indicates package is RoHS compliant (‘Green’).
TO-92 taping specifications and winding styles per EIA-468 Standard.
Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF57 for layout and dimensions.
2.0V
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
3-Lead TO-92
(max)
Pin Configuration
TN2640N3-G P003
TN2640N3-G P005
VGS(th)
GATE
TO-92
Typical Thermal Resistance
Package
θja
TO-252 (D-PAK)
81OC/W
8-Lead SOIC
101OC/W
TO-92
132OC/W
Supertex inc.
www.supertex.com
TN2640
Product Marking
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Si YYWW
TN2640
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
YYWW
N2640
LLLL
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or
8-Lead SOIC
TO-252 (D-PAK)
SiTN
2 6 4 0
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Thermal Characteristics
(continuous)†
ID
Power Dissipation
(pulsed)
@TA = 25OC
TO-252 (D-PAK)
500mA
3.0A
8-Lead SOIC
260mA
TO-92
220mA
ID
Package
IDR†
IDRM
2.5W‡
500mA
3.0A
2.0A
‡
1.3W
260mA
2.0A
2.0A
0.74W
220mA
2.0A
Notes:
† ID (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
400
-
-
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate threshold voltage
0.8
-
2.0
V
VGS = VDS, ID = 2.0mA
Change in VGS(th) with temperature
-
-2.5
-4.0
mV/OC
VGS = VDS, ID = 2.0mA
IGSS
Gate body leakage
-
100
nA
VGS = ±20V, VDS = 0V
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
RDS(ON)
Static drain-to-source
on-state resistance
Change in RDS(ON) with temperature
ΔVGS(th)
ΔRDS(ON)
-
-
10
µA
VGS = 0V, VDS = Max rating
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
1.5
3.5
-
2.0
4.0
-
-
3.2
5.0
-
3.0
5.0
-
-
0.75
%/ C
VGS = 10V, ID = 500mA
200
330
-
mmho
VDS = 25V, ID = 100mA
GFS
Forward transconductance
CISS
Input capacitance
-
210
225
COSS
Common source output capacitance
-
30
50
CRSS
Reverse transfer capacitance
-
8.0
15
Doc.# DSFP-TN2640
C071913
Conditions
2
A
Ω
O
pF
VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 4.5V, ID = 500mA
VGS = 10V, ID = 500mA
VGS = 0V,
VDS = 25V,
f = 1.0MHz
Supertex inc.
www.supertex.com
TN2640
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
td(ON)
tr
td(OFF)
tf
VSD
trr
Min
Typ
Max
Units
Conditions
Turn-on delay time
-
4.0
15
Rise time
-
15
20
ns
VDD = 25V,
ID = 2.0A,
RGEN = 25Ω
Turn-off delay time
-
20
25
Fall time
-
22
27
Diode forward voltage drop
-
-
0.9
V
VGS = 0V, ISD = 200mA
Reverse recovery time
-
300
-
ns
VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
N- Channel Switching Waveforms and Test Circuit
10V
INPUT
0V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
OUTPUT
0V
Doc.# DSFP-TN2640
C071913
VDD
90%
t(OFF)
tr
td(OFF)
OUTPUT
RGEN
tf
10%
10%
90%
RL
INPUT
D.U.T.
90%
3
Supertex inc.
www.supertex.com
TN2640
Typical Performance Curves
BVDSS Variation with Temperature
1.15
On-Resistance vs. Drain Current
10
VGS = 5.0V
8
RDS(ON) (ohms)
1.05
1.00
4
2
0.95
0.90
VGS = 10V
6
-50
0
50
100
0
150
0
1.0
2.0
V
Transfer Characteristics
3.0
(th)
1.4
5.0
and RDS Variation with Temperature
2.2
V(th) @ 2.0mA
1.2
125OC
TA = -55OC
1.8
VGS(th) (normalized)
ID (amperes)
4.0
25OC
2.4
1.2
VDS = -25V
0.6
0
3.0
ID (amperes)
Tj (OC)
1.0
1.4
0.8
-1.0
RDS(ON) @ 10V, 0.5A
0.6
0
2
4
6
8
0.4
10
1.8
-50
0
0.6
50
VGS (volts)
RDS(ON) (normalized)
BVDSS (normalized)
1.10
100
150
0.2
Tj (OC)
Capacitance vs. Drain-to-Source Voltage
10
400
Gate Drive Dynamic Characteristics
f = 1MHz
8
VGS (volts)
C (picofarads)
300
200
CISS
653pF
6
VDS = 10V
4
VDS = 40V
100
2
COSS
0
253pF
CRSS
0
10
20
30
0
40
Doc.# DSFP-TN2640
C071913
0
1
2
3
4
5
QG (nanocoulombs)
VDS (volts)
4
Supertex inc.
www.supertex.com
TN2640
Typical Performance Curves (cont.)
Output Characteristics
5.0
4.0
VGS = 10V
8V
6V
4V
2.0
VGS = 10V
8V
6V
4V
3.0
ID (amperes)
ID (amperes)
Saturation Characteristics
2.5
2.0
1.5
3V
1.0
3V
1.0
0
2.0
0.5
2V
2V
0
10
20
30
40
VDS (volts)
0
50
0
2
4
6
8
10
VDS (volts)
Transconductance vs. Drain Current
3.0
VDS = 25V
Power Dissipation vs. Temperature
2.4
1.2
1.8
TA = -55OC
0.8
0.6
125OC
0
1.0
2.0
3.0
4.0
SO-8
1.2
TO-92
25OC
0.4
0
PD (watts)
GFS (siemens)
DPAK
1.6
0
5.0
0
25
50
ID (amperes)
Maximum Rated Safe Operating Area
1.0
Thermal Resistance (normalized)
10
TO-92 (pulsed)
ID (amperes)
1.0
DPAK (DC)
SO-8 (pulsed)
TO-92 (DC)
0.1
75
100
SO-8 (DC)
0.01
0.8
0.6
0.4
TO-92
PD = 1W
TC = 25OC
0.2
TC = 25 C
0
1.0
100
0
1000
VDS (volts)
Doc.# DSFP-TN2640
C071913
150
Thermal Response Characteristics
O
0.001
125
TC (OC)
0.001
0.01
0.1
1.0
10
tP (seconds)
5
Supertex inc.
www.supertex.com
TN2640
3-Lead TO-252 D-PAK Package Outline (K4)
b3
E
A
c2
E1
4
L3
θ1
D1
H
D
1
2
3
L4
L5
Note 1
View B
b2
b
e
Front View
Side View
Rear View
Gauge
Plane
A1
L2
θ
Seating
Plane
L
L1
View B
Note:
1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed.
Symbol
Dimension
(inches)
MIN
A
A1
b
b2
b3
c2
D
D1
E
E1
.086
.000*
.025
.030
.195
.018
.235
.205
.250
.170
NOM
-
-
-
-
-
-
.240
-
-
-
MAX
.094
.005
.035
.045
.215
.035
.245
.217*
.265
.182*
e
.090
BSC
H
L
.370
.055
-
.060
.410
.070
L1
.108
REF
L2
.020
BSC
L3
L4
L5
θ
θ1
.035
.025*
.045
0
0O
-
-
-
-
.050
.040
.060
10
O
O
15O
JEDEC Registration TO-252, Variation AA, Issue E, June 2004.
* This dimension is not specified in the JEDEC drawing.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO252K4, Version E041309.
Doc.# DSFP-TN2640
C071913
6
Supertex inc.
www.supertex.com
TN2640
8-Lead SOIC (Narrow Body) Package Outline (LG)
4.90x3.90mm body, 1.75mm height (max), 1.27mm pitch
θ1
D
8
Note 1
(Index Area
D/2 x E1/2)
E1
E
L2
L
1
θ
L1
Top View
View B
Note 1
Gauge
Plane
Seating
Plane
View B
h
A
h
A A2
Seating
Plane
A1
e
b
Side View
View A-A
A
Note:
1. This chamfer feature is optional. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier;
an embedded metal marker; or a printed indicator.
Symbol
Dimension
(mm)
A
A1
A2
b
MIN
1.35*
0.10
1.25
0.31
NOM
-
-
-
-
MAX
1.75
0.25
1.65*
0.51
D
E
E1
4.80* 5.80* 3.80*
4.90
6.00
3.90
5.00* 6.20* 4.00*
e
1.27
BSC
h
L
0.25
0.40
-
-
0.50
1.27
L1
1.04
REF
L2
0.25
BSC
θ
θ1
0O
5O
-
-
8
15O
O
JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005.
* This dimension is not specified in the JEDEC drawing.
Drawings are not to scale.
Supertex Doc. #: DSPD-8SOLGTG, Version I041309.
Doc.# DSFP-TN2640
C071913
7
Supertex inc.
www.supertex.com
TN2640
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TN2640
C071913
8
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
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