TN2640 TN2640 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 DPAK Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640K4 TN2640ND MIL visual screening available. Features Low Threshold DMOS Technology ❏ Low threshold — 2.0V max. These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications Package Options ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems D (TAB) ❏ Photo voltaic drives G ❏ Analog switches S ❏ General purpose line drivers SGD ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. TO-252 (D-PAK) TO-92 NC 1 8 D NC 2 7 D S 3 6 D G 4 5 D -55°C to +150°C 300°C top view SO-8 Note: See Package Outline section for dimensions. 12/19/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. TN2640 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C θjc θja °C/W °C/W IDR* IDRM TO-92 220mA 2.0A 1.0W 125 170 220mA 2.0A SO-8 260mA 2.0A 1.3W† 24 96† 260mA 2.0A DPAK 500mA 3.0A 2.5W† 6.25 50 500mA 3.0A * ID (continuous) is limited by max rated Tj. † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage 400 VGS(th) Gate Threshold Voltage 0.8 ∆VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) -2.5 ON-State Drain Current RDS(ON) Typ 1.5 3.5 2.0 4.0 3.2 Static Drain-to-Source ON-State Resistance 3.0 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS Max Unit V VGS = 0V, ID = 1.0mA 2.0 V VGS = VDS, ID= 2.0mA -4.0 mV/°C VGS = VDS, ID= 2.0mA 100 nA VGS = ± 20V, VDS = 0V 10 µA VGS = 0V, VDS = Max Rating 1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C A VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V 5.0 Ω 5.0 0.75 200 Conditions 330 225 Common Source Output Capacitance 35 70 CRSS Reverse Transfer Capacitance 7.0 25 td(ON) Turn-ON Delay Time 4.0 15 tr Rise Time 15 20 td(OFF) Turn-OFF Delay Time 20 25 tf Fall Time 22 27 VSD Diode Forward Voltage Drop trr Reverse Recovery Time VGS = 10V, ID = 500mA %/°C VGS = 10V, ID = 500mA VDS = 25V, ID = 100mA m 180 VGS = 4.5V, ID = 500mA Ω Symbol 0.9 300 pF VGS = 0V, VDS = 25V f = 1.0 MHz ns VDD = 25V, ID = 2.0A, RGEN = 25Ω V VGS = 0V, ISD = 200mA ns VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 TN2640 Typical Performance Curves Output Characteristics Saturation Characteristics 5.0 2.5 VGS = 10V 6V 4.0 8V 2.0 3.0 6V 8V ID (amperes) ID (amperes) VGS = 10V 4V 2.0 4V 1.5 3V 1.0 3V 1.0 0.5 2V 2V 0 0 10 20 30 40 0 0 50 2 4 VDS (volts) 8 10 Power Dissipation vs. Temperature Transconductance vs. Drain Current 2.0 3.0 1.6 2.4 DPAK VDS = 25V 1.2 PD (watts) GFS (siemens) 6 VDS (volts) TA = -55°C 0.8 0.4 1.8 SO-8 1.2 TO-92 0.6 25°C 125°C 0 0 0 1.0 2.0 3.0 4.0 5.0 0 25 50 ID (amperes) 125 100 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 Thermal Resistance (normalized) 1.0 TO-92 (pulsed) 1.0 ID (amperes) 75 TC (°C) DPAK (DC) SO-8 (pulsed) TO-92 (DC) 0.1 SO-8 (DC) 0.01 TC = 25°C 10 100 0.6 0.4 1000 VDS (volts) TO-92 0.2 TC = 25°C PD = 1.0W 0 0.001 0.001 0 0.8 0.01 0.1 tp (seconds) 3 1.0 10 TN2640 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.15 10 VGS = 5V 8 RDS(ON) (ohms) BVDSS (normalized) 1.10 1.05 1.00 0.95 VGS = 10V 6 4 2 0.9 0.90 0 -50 0 50 100 150 0 1.0 2.0 3.0 4.0 5.0 ID (amperes) Tj (°C) Transfer Characteristics VTH and RDS Variation with Temperature 3.0 1.4 2.2 25°C V(th) @ 2mA 125°C TA = -55°C 1.8 1.2 VDS = 25V 0.6 1.0 1.4 0.8 1.0 0.6 0 1.8 0.6 RDS(ON)@ 10V, 0.5A 0.4 0 2 4 6 8 0.2 -50 10 RDS(ON) (normalized) 1.2 VGS(th) (normalized) ID (amperes) 2.4 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 400 f = 1MHz 8 300 200 VGS (volts) C (picofarads) 653pF CISS 6 VDS = 10V 4 VDS = 40V 100 2 COSS 253pF CRSS 0 0 10 20 30 0 0 40 1 2 3 4 5 QG (nanocoulombs) VDS (volts) 12/19/01rev.1 ©2001 Supertex Inc. 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