Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Applications ►► ►► ►► ►► ►► ►► Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Part Number VN0109N3-G VN0109N3-G P002 Package Option Product Summary Packing TO-92 1000/Bag TO-92 2000/Reel BVDSS/BVDGS 90V VN0109N3-G P003 VN0109N3-G P005 Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. RDS(ON) IDSS (max) (min) 3.0Ω 2.0A Pin Configuration VN0109N3-G P013 VN0109N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55 C to +150 C O O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance Package θja TO-92 132OC/W Doc.# DSFP-VN0109 C081913 GATE TO-92 Product Marking SiVN 0 1 0 9 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 Supertex inc. www.supertex.com VN0109 Thermal Characteristics Package TO-92 (continuous)† ID (pulsed) ID Power Dissipation @TC = 25OC IDR† IDRM 350mA 2.0A 1.0W 350mA 2.0A Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T A Sym Parameter BVDSS VGS(th) = 25OC unless otherwise specified) Min Typ Max Units Drain-to-source breakdown voltage 90 - - V VGS = 0V, ID = 1.0mA Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - -3.8 -5.5 IGSS Gate body leakage - - 100 - - 1.0 IDSS Zero gate voltage drain current ID(ON) On-state drain current ΔVGS(th) RDS(ON) ΔRDS(ON) - - 100 0.5 1.0 - 2.0 2.5 - - 3.0 5.0 - 2.5 3.0 - 0.70 1.0 300 450 - Static drain-to-source on-state resistance Change in RDS(ON) with temperature GFS Forward transductance CISS Input capacitance - 55 65 COSS Common source output capacitance - 20 25 CRSS Reverse transfer capacitance - 5.0 8.0 td(ON) Turn-on delay time - 3.0 5.0 Rise time - 5.0 8.0 Turn-off delay time - 6.0 9.0 Fall time - 5.0 8.0 Diode forward voltage drop - 1.2 Reverse recovery time - 400 tr td(OFF) tf VSD trr Conditions mV/OC VGS = VDS, ID= 1.0mA nA µA A Ω %/OC VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5.0V, ID = 250mA VGS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A mmho VDS = 25V, ID = 500mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 1.0A, RGEN = 25Ω 1.8 V VGS = 0V, ISD = 1.0A - ns VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-VN0109 C081913 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com VN0109 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 5.0 1.1 VGS = 5.0V RDS(ON) (Ω) BVDSS (normalized) 4.0 1.0 VGS = 10V 3.0 2.0 1.0 0.9 0 50 100 0 150 0 0.5 1.0 V Transfer Characteristics 2.5 1.5 2.0 2.5 ID (amperes) Tj ( C) O (th) 1.6 and RDS Variation with Temperature 1.9 VDS = 25V 1.6 1.4 TA = -55OC VGS(th) (normalized) ID (amperes) 2.0 25OC 1.5 125OC 1.0 RDS @ 10V, 1.0A 1.3 1.2 V(th) @ 1.0mA RDS @ 5.0V, 0.25A 1.0 1.0 0.7 RDS(ON) (normalized) -50 0.8 0.5 0.4 0 0 2 4 6 8 0.6 -50 10 0 50 VGS (volts) 150 Gate Drive Dynamic Characteristics Capacitance vs. Drain-to-Source Voltage 100 10 f = 1.0MHz VDS = 10V 8 75 40V VGS (volts) C (picofarads) 100 Tj (OC) 50 CISS 6 80 pF 4 25 2 COSS 0 40 pF CRSS 0 10 20 30 0 40 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) VDS (volts) Doc.# DSFP-VN0109 C081913 0 3 Supertex inc. www.supertex.com VN0109 Typical Performance Curves (cont.) Output Characteristics 2.5 Saturation Characteristics 2.5 VGS = 10V 9.0V VGS = 10V 8.0V 2.0 9.0V 2.0 8.0V 7.0V ID (amperes) ID (amperes) 7.0V 1.5 6.0V 1.0 5.0V 0.5 4.0V 1.5 6.0V 1.0 5.0V 0.5 4.0V 3.0V 0 0 10 20 30 3.0V 0 40 0 2.0 4.0 Transconductance vs. Drain Current 1.0 6.0 8.0 10 VDS (volts) VDS (volts) 2.0 VDS = 25V Power Dissipation vs. Case Temperature 0.6 PD (watts) GFS (siemens) 0.8 TA = -55OC 25OC 0.4 125OC 1.0 TO-92 0.2 0 0 0.2 0.4 0.6 0.8 0 1.0 0 25 50 ID (amperes) Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) ID (amperes) 10 1.0 TO-92 (DC) 0.1 0.01 0.1 TC = 25OC 1.0 10 100 125 150 Thermal Response Characteristics 0.8 0.6 0.4 0.2 0 0.001 100 VDS (volts) Doc.# DSFP-VN0109 C081913 75 TC (OC) TO-92 PD = 1.0W TC = 25OC 0.01 0.1 1.0 10 tP (seconds) 4 Supertex inc. www.supertex.com VN0109 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN0109 C081913 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com