Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN2540 General Description Low threshold (2.0V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog and Telecom switches General purpose line drivers Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Product Summary Ordering Information Part Number Package Options Packing TN2540N3-G TO-92 1000/Bag TN2540N3-G P002 TO-92 2000/Reel TN2540N3-G P003 TO-92 2000/Reel TN2540N3-G P005 TO-92 2000/Reel TN2540N3-G P013 TO-92 2000/Reel TN2540N3-G P014 TO-92 2000/Reel TN2540N8-G TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92 Taping Specifications and Winding Styles Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Absolute Maximum Ratings 400V RDS(ON) ID(ON) VGS(th) (max) (min) (max) 12Ω 1.0A 2.0V Pin Configuration DRAIN DRAIN SOURCE SOURCE DRAIN GATE GATE TO-92 Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature BVDSS/BVDGS -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance Package θja TO-92 132OC/W TO-243AA (SOT-89) 133OC/W* TO-243AA (SOT-89) Product Marking S iTN 2 5 4 0 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 TN5DW W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) * Mounted on FR5 Board, 25mm x 25mm x 1.57mm Doc.# DSFP-TN2540 A062113 Supertex inc. www.supertex.com TN2540 Thermal Characteristics (continuous)† ID (pulsed) ID Power Dissipation TO-92 175mA 2.0A TO-243AA (SOT-89) 260mA 1.8A Package IDR† IDRM 1.0W 175mA 2.0A 1.6W‡ 260mA 1.8A @TA = 25OC Notes: † ID (continuous) is limited by max rated Tj . ‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 400 - - V VGS = 0V, ID = 100µA VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - -2.5 -4.0 Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V - - 10 µA VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C 0.3 0.5 - 0.75 1.0 - - 8.0 12 - 8.0 12 - - 0.75 125 200 - ΔVGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) ΔRDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Conditions mV/ C VGS = VDS, ID= 1.0mA O A Ω %/ C O VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 150mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA GFS Forward transductance CISS Input capacitance - 95 125 COSS Common source output capacitance - 20 70 CRSS Reverse transfer capacitance - 10 25 td(ON) Turn-on delay time - - 20 Rise time - - 15 Turn-off delay time - - 25 Fall time - - 20 Diode forward voltage drop - - 1.8 V VGS = 0V, ISD = 200mA Reverse recovery time - 300 - ns VGS = 0V, ISD = 1.0A tr td(OFF) tf VSD trr mmho VDS = 25V, ID = 100mA pF ns VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 25V, ID = 1.0A, RGEN = 25Ω Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-TN2540 A062113 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com TN2540 Typical Performance Curves 2.0 Output Characteristics Saturation Characteristics 1.0 VGS = 10V 1.6 VGS = 10V ID (amperes) ID (amperes) 8V 1.2 6V 0.8 5V 5.0V 0.6 0.4 4.0V 0.4 0 0 0.2 4V 3V 10 20 30 40 3.0V 0.0 50 0 2 4 VDS (volts) 1.0 6 8 10 VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 2.0 V DS =15V TO-243AA 0.8 GFS (siemens) 8.0V 6.0V 0.8 PD (watts) 0.6 T A = -55 O C 0.4 TO-92(DC) 1.0 25 O C 125 O C 0.2 0.0 0.0 0.2 0.4 0.8 0.6 0 1.0 0 25 50 Maximum Rated Safe Operating Area Thermal Resistance (normalized) ID (amperes) 0.001 1.0 TO-243AA(pulsed) TO-243AA(DC) TO-92(DC) 0.01 0.1 1.0 10 150 Thermal Response Characteristics TO-243AA P D = 1.6W T C = 25 O C 0.8 0.6 0.4 0.2 0 0.001 100 0.01 0.1 1.0 10 tp (seconds) VDS (volts) Doc.# DSFP-TN2540 A062113 125 O 10 0.1 100 TA ( C) ID (amperes) 1.0 75 3 Supertex inc. www.supertex.com TN2540 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.1 On-Resistance vs. Drain Current 50 VGS = 4.5V RDS(ON) (ohms) VDSS (normalized) 40 1.0 VGS = 10V 30 20 10 0.9 -50 0 50 100 0 150 0 0.4 0.8 1.5 1.2 1.6 2.0 Tj ( C) ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature O 2.5 VDS = 25 C O 1.4 VGS(th) (normalized) ID (amperes) TA = -55OC 0.9 25OC 0.6 0.3 V(th) @ 1mA 1.2 2.0 1.5 1.0 1.0 0.8 RDS (normalized) R DS(ON) @ 10V, 0.5A 1.2 0.5 125OC 0.6 0 0 2 4 6 8 10 -50 0 50 VGS (volts) 0 150 100 Tj (OC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 200 10 f = 1MHz 8 VGS (volts) C (picofarads) 150 100 CISS VDS = 10V 6 VDS = 40V 4 260pF 50 2 CRSS 0 0 95pF COSS 10 20 30 0 40 Doc.# DSFP-TN2540 A062113 0 0.4 0.8 1.2 1.6 2.0 QG (nanocoulombs) VDS (volts) 4 Supertex inc. www.supertex.com TN2540 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Doc.# DSFP-TN2540 A062113 5 Supertex inc. www.supertex.com TN2540 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2540 A062113 6 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com