Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold (1.6V max.) High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Part Number TN0604N3-G Product Summary Package Option Packing TO-92 1000/Bag TO-92 2000/Reel TN0604N3-G P002 TN0604N3-G P003 TN0604N3-G P005 Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. BVDSS/BVDGS 40V RDS(ON) ID(ON) (max) (min) 0.75Ω 4.0A VGS(th) (max) 1.6V Pin Configuration TN0604N3-G P013 TN0604N3-G P014 DRAIN -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. SOURCE GATE TO-92 Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage Operating and storage temperature S iT N 0 604 YYWW ±20V -55 C to +150OC O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Doc.# DSFP-TN0604 D080813 Product Marking YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 Typical Thermal Resistance Package θja TO-92 132OC/W Supertex inc. www.supertex.com TN0604 Thermal Characteristics ID Package TO-92 (continuous)† ID Power Dissipation (pulsed) @TA = 25OC 0.7A 4.6A 0.74W IDR† IDRM 0.7A 4.6A Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter BVDSS VGS(th) O Min Typ Max Units Drain-to-source breakdown voltage 40 - - V VGS = 0V, ID = 2.0mA Gate threshold voltage 0.6 - 1.6 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - -3.8 -4.5 IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V - - 10 µA IDSS Zero gate voltage drain current VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C ID(ON) On-state drain current 1.5 2.1 - 4.0 7.0 - - 1.0 1.6 - 0.6 0.75 - 0.5 0.75 500 800 - ΔVGS(th) RDS(ON) ΔRDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Conditions mV/OC VGS = VDS, ID= 1.0mA A Ω %/ C O VGS = 5.0V, VDS = 20V VGS = 10V, VDS = 20V VGS = 5.0V, ID = 0.75A VGS = 10V, ID = 1.5A VGS = 10V, ID = 1.5A GFS Forward transductance CISS Input capacitance - 140 190 COSS Common source output capacitance - 75 110 CRSS Reverse transfer capacitance - 25 50 td(ON) Turn-on delay time - - 10 Rise time - - 6.0 Turn-off delay time - - 25 Fall time - - 20 Diode forward voltage drop - 1.2 1.8 V VGS = 0V, ISD = 1.5A Reverse recovery time - 300 - ns VGS = 0V, ISD = 1.0A tr td(OFF) tf VSD trr mmho VDS = 20V, ID = 1.5A pF ns VGS = 0V, VDS = 20V, f = 1.0MHz VDD = 20V, ID = 0.5A, RGEN = 25Ω Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-TN0604 D080813 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com TN0604 Typical Performance Curves Output Characteristics 10 Saturation Characteristics 10 8.0 8.0 9V 6.0 ID (amperes) ID (amperes) VGS = 10V 8V 4.0 7V VGS = 10V 6.0 9V 8V 4.0 7V 6V 6V 5V 2.0 5V 2.0 4V 4V 0 3V 3V 0 10 20 30 0 40 2.0 6.0 8.0 10 VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 2.0 VDS = 25V PD (watts) TA = -55OC 25OC 1.0 125OC 0 0 1.0 2.0 3.0 4.0 5.0 6.0 1.0 TO-92 0 7.0 0 25 50 ID (amperes) 100 1.0 Thermal Resistance (normalized) TO-92 (pulsed) 1.0 TO-92 (DC) 0.1 Doc.# DSFP-TN0604 D080813 VDS (volts) 150 Thermal Response Characteristics 0.8 0.6 0.4 TO-92 P D = 1.0W TC = 25OC 0.2 TC = 25OC 1.0 125 TA ( C) Maximum Rated Safe Operating Area 0.01 0.1 75 O 10 ID (amperes) 4.0 VDS (volts) 2.0 GFS (siemens) 0 10 0 100 0.001 0.01 0.1 1.0 10 tP (seconds) 3 Supertex inc. www.supertex.com TN0604 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 2.0 1.1 RDS(ON) (ohms) BVDSS (normalized) VGS = 5.0V 1.0 VGS = 1.0V 1.0 0.9 50 100 10 ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature VDS = 25V TA = -55OC 25OC 4.0 125OC 2.0 2.0 1.4 1.4 6..0 0 0 5.0 Tj (OC) 8.0 ID (amperes) 0 0 150 VGS(th) (normalized) 10 0 4.0 6.0 8.0 V(th) @1.0mA 1.2 RDS @10V, 1.5A 1.0 0.8 0.6 0.6 0 50 VGS (volts) 100 150 Tj (OC) Capacitance vs. Drain-to-Source Voltage 200 1.0 0.8 -50 10 1.2 RDS(ON) (normalized) -50 10 Gate Drive Dynamic Characteristics f = 1.0MHz VDS = 10V 8.0 CISS VGS (volts) C (picofarads) 150 100 170 pF 6.0 170 pF VDS = 40V 4.0 COSS 50 2.0 CRSS 0 0 10 20 30 0 40 Doc.# DSFP-TN0604 D080813 0 1.0 2.0 3.0 4.0 5.0 QG (nanocoulombs) VDS (volts) 4 Supertex inc. www.supertex.com TN0604 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN0604 D080813 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com