TLE 4266 5-V Low-Drop Voltage Regulator TLE 4266 Bipolar IC Features ● ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % Very low current consumption Low-drop voltage Overtemperature protection Reverse polarity proof Wide temperature range Suitable for use in automotive electronics Inhibit P-SOT223-4-2 Type Ordering Code Package TLE 4266 G Q67006-A9152 P-SOT223-4-2 (SMD) Q67006-A9355 P-SOT223-4-2 (SMD) ▼ TLE 4266 GSV10 ▼ New type Functional Description TLE 4266 G is a 5-V low-drop voltage regulator in a P-SOT223-4-2 SMD package. The IC regulates an input voltage Vi in the range of 5.5 V < Vi < 45 V to VQrated = 5 V / 10 V. The maximum output current is more than 120 mA. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 10 µA. The IC is shortcircuit-proof and incorporates temperature protection that disables the IC an overtemperature. Dimensioning Information on External Components The input capacitor Ci is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with Ci, the oscillating of input inductivity and input capacitance can be clamped. The output capacitor CQ is necessary for the stability of the regulating circuit. Stability is guaranteed at values CQ ≥ 10 µF and an ESR ≤ 10 Ω within the operating temperature range. Semiconductor Group 1 1998-11-01 TLE 4266 Pin Configuration (top view) GND 4 1 2 3 VΙ Inh VQ AEP01734 Pin Definitions and Functions Pin Symbol Function 1 VI Input voltage; block to ground directly at the IC with a ceramic capacitor. 2 Inh Inhibit; low-active input. 3 VQ Output voltage; block to ground with a ≥ 10 µF capacitor. 4 GND Ground Semiconductor Group 2 1998-11-01 TLE 4266 Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: ● ● ● Overload Overtemperature Reverse polarity Saturation Control and Protection Circuit Temperature Sensor Input 3 1 Control Amplifier Adjustment Output Buffer Bandgap Reference 2 Inhibit 4 GND AEB01725 Block Diagram Semiconductor Group 3 1998-11-01 TLE 4266 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. max. Unit Notes Input Voltage Vi – 42 45 V – Current Ii – – – internally limited Ve – 42 45 V – Voltage VQ –1 16 V – Current IQ – – – internally limited IM 50 – mA – Junction temperature Tj – 150 °C – Storage temperature TS – 50 150 °C – Input voltage Vi 5.5 45 V – Input voltage GSV 10-version Vi 10.5 45 V – Junction temperature Tj – 40 150 °C – Junction ambient RthjA – 100 K/W soldered Junction case RthjC – 25 K/W – Inhibit Voltage Output GND Current Temperature Operating Range Thermal Resistance Semiconductor Group 4 1998-11-01 TLE 4266 Characteristics VI = 13.5 V; – 40 °C ≤ Tj ≤ 125 °C Parameter Symbol Limit Values min. typ. max. Unit Test Condition Output voltage VQ 4.9 5 5.1 V 5 mA ≤ IQ ≤ 100 mA 6 V ≤ Vi ≤ 28 V Output voltage GSV 10-version VQ 9.8 10.0 10.2 V 5 mA ≤ IQ ≤ 100 mA 6 V ≤ Vi ≤ 28 V Output-current limitation IQ 120 150 – mA – Current consumption Iq = Ii – IQ Iq – 0 10 µA Ve = 0 V; Tj ≤ 100 °C Current consumption Iq = Ii – IQ Iq – – 400 µA IQ = 1 mA Current consumption Iq = Ii – IQ Iq – 10 15 mA IQ = 100 mA Drop voltage VDr – 0.25 0.5 V IQ = 100 mA1) Load regulation ∆VQ – – 40 mV IQ = 5 to 100 mA Vi = 6 V Supply-voltage regulation ∆VQ – 15 30 mV VI = 6 V to 28 V IQ = 5 mA Supply-voltage rejection SVR – 54 – dB fr = 100 Hz Vr = 0.5 VSS Inhibit on voltage Ve, on – – 3.5 V – Inhibit off voltage Ve, off 0.8 – – V – Inhibit current Ie 5 15 25 µA Ve = 5 V Inhibit 1) Drop voltage = Vi – VQ (measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at Vi = 13.5 V). Semiconductor Group 5 1998-11-01 TLE 4266 Input 5.5 V to 45 V 1 Ιi 470 µF Output 3 ΙQ 22 µF 100 nF TLE 4266G Vi Ve 2 Ιe VQ 4 AES01726 Measuring Circuit Input 5.5 V to 45 V 1 3 Output CQ 22 µF Ci TLE 4266G 2 4 e.g. Kl. 15 AES01727 Application Circuit Semiconductor Group 6 1998-11-01 TLE 4266 Drop Voltage VDr versus Output Current IQ V Dr Current Consumption Iq versus Input Voltage Vi 800 mV 700 AED01979 15 Ι q mA 600 10 500 R L = 50 Ω Tj = 125 C 400 300 5 200 R L = 100 Ω Tj = 25 C 100 0 25 50 75 100 125 mA 0 175 0 10 20 30 40 V 50 ΙQ Vi Current Consumption Iq versus Output Current IQ Current Consumption Iq versus Output Current IQ AED01980 12 AED01981 3.0 Ι q mA Ι q mA 10 2.5 8 2.0 Vi = 13.5 V 6 1.5 4 1.0 Vi = 13.5 V 2 0 0.5 0 50 100 mA 0 150 ΙQ Semiconductor Group 7 0 5 10 15 20 30 mA ΙQ 1998-11-01 TLE 4266 Output Voltage VQ versus Temperature Tj (5 V-version) Output Current IQ versus Input Voltage Vi AED01982 5.20 VQ AED01983 200 Ι Q mA V 5.10 Vi = 13.5 V 150 5.00 Tj = 25 C 4.90 100 Tj = 125 C 4.80 50 4.70 4.60 -40 0 40 80 0 120 C 160 Tj VQ 20 30 40 V 50 Output Voltage VQ versus Inhibit Voltage Ve (5 V-version) AED01984 AED02014 6 R L = 50 Ω V 10 Vi Output Voltage VQ versus Input Voltage Vi (5 V-version) 6 0 VQ 5 V 5 V Ι = 13.5 V 4 4 V Ι = Ve 3 3 2 2 1 1 0 0 2 4 6 8 0 V 10 Vi Semiconductor Group 0 1 2 3 4 5 V 6 Ve 8 1998-11-01 TLE 4266 Package Outlines P-SOT223-4-2 (Plastic Small Outline Transistor) 1.6 ±0.1 6.5 ±0.2 0.1 max +0.2 acc. to DIN 6784 1 2 3.5 ±0.2 4 0.5 min B 7 ±0.3 3 ±0.1 15˚max A 3 0.28 ±0.04 2.3 0.7 ±0.1 0.25 M A 0.25 Weight approx. 0.15 g Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Semiconductor Group 9 M B GPS05560 4.6 Dimensions in mm 1998-11-01