Low-Drop Voltage Regulator TLE 4274 Features • • • • • • Output voltage tolerance ≤ ± 4 % Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics P-TO220-3-1 Type Ordering Code Package TLE 4274 V10 Q67000-A9258 P-TO220-3-1 TLE 4274 V85 Q67000-A9257 P-TO220-3-1 TLE 4274 V50 Q67000-A9256 P-TO220-3-1 TLE 4274 D V50 Q67006-A9331 P-TO252-3-1 TLE 4274 G V10 Q67006-A9261 P-TO263-3-1 TLE 4274 G V50 Q67006-A9259 P-TO263-3-1 TLE 4274 G V85 Q67006-A9260 P-TO263-3-1 P-TO252-3-1 SMD = Surface Mounted Device Functional Description The TLE 4274 is a low-drop voltage regulator in a TO220 package. The IC regulates an input voltage up to 40 V to VQrated = 5.0 V (V50), 8.5 V (V85) and 10 V (V10). The maximum output current is 400 mA. The IC is short-circuit proof and incorporates temperature protection that disables the IC at over temperature. Dimensioning Information on External Components P-TO263-3-1 The input capacitor CI is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can be damped. The output capacitor CQ is necessary for the stability of the regulation circuit. Stability is guaranteed at values CQ ≥ 22 µF and an ESR of ≤ 3 Ω within the operating temperature range. Semiconductor Group 1 1998-11-01 TLE 4274 Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: • Overload • Overtemperature • Reverse polarity Pin Configuration (top view) P-TO220-3-1 P-TO252-3-1 P-TO263-3-1 GND Ι Q AEP02512 Ι GND Q AEP02281 Ι GND Q AEP01957 Figure 1 Pin Definitions and Functions Pin No. Symbol Function 1 I Input; block to ground directly at the IC with a ceramic capacitor. 2 GND Ground 3 Q Output; block to ground with a ≥ 22 µF capacitor. Semiconductor Group 2 1998-11-01 TLE 4274 Saturation Control and Protection Circuit Temperature Sensor Ι 1 3 Control Amplifier Q Buffer Bandgap Reference 2 GND AEB01959 Figure 2 Block Diagram Semiconductor Group 3 1998-11-01 TLE 4274 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. max. Unit Test Condition Voltage Regulator Input Voltage VI – 42 45 V – Current II – – – Internally limited VQ IQ – 1.0 40 V – – – – Internally limited IGND – 100 mA – Tj Tstg – 150 °C – – 50 150 °C – Output Voltage Current Ground Current Temperature Junction temperature Storage temperature Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Operating Range Parameter Symbol Limit Values min. max. Unit Remarks Input voltage VI 5.5 9.0/10.5 40 40/40 V V50 V85/V10 Junction temperature Tj – 40 150 °C – Rthja Rthja Rthjc – 65 K/W TO220 – 70 K/W TO2521), TO263 – 4 K/W – Thermal Resistance Junction ambient Junction ambient Junction case 1) Soldered in, min. footprint Semiconductor Group 4 1998-11-01 TLE 4274 Characteristics VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. typ. max. Unit Measuring Conditions Output voltage V50-Version VQ 4.8 5 5.2 V 5 mA < IQ < 400 mA 6 V < VI < 40 V Output voltage V85-Version VQ 8.16 8.5 8.84 V 5 mA < IQ < 400 mA 9.5 V < VI < 40 V Output voltage V10-Version VQ 9.6 10 10.4 V 5 mA < IQ < 400 mA 11 V < VI < 40 V Output current limitation1) IQ 400 600 – mA – Current consumption; Iq = II – IQ Iq – 100 220 µA IQ = 1 mA Current consumption; Iq = II – IQ Iq – 8 15 mA IQ = 250 mA – 20 30 mA Drop voltage1) Iq Vdr – 250 500 mV Load regulation ∆VQ – 20 50 mV IQ = 400 mA IQ = 250 mA Vdr = VI – VQ IQ = 5 mA to 400 mA ∆Vl = 12 V to 32 V IQ = 5 mA fr = 100 Hz; Vr = 0.5 VSS Line regulation ∆VQ – 10 25 mV Power supply ripple rejection PSRR – 60 – dB Temperature output voltage drift dV Q ----------dT – 0.5 – mV/K – 1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V. Semiconductor Group 5 1998-11-01 TLE 4274 ΙΙ 1 Input 3 CΙ 100 nF 100 µ F ΙQ Output CQ 22 µF TLE 4274 VΙ VQ 2 RL AES01960 Figure 3 Measuring Circuit 3 1 Input Output TLE 4274 CΙ CQ 2 AES01961 Figure 4 Application Circuit Semiconductor Group 6 1998-11-01 TLE 4274 Typical Performance Characteristics (V50, V85 and V10): Drop Voltage Vdr versus Output Current IQ Output Current IQ versus Input Voltage VI AED01962 600 V dr AED01963 800 mA mV ΙQ 600 T j = 125 C 400 T j = 25 C VQ = 0 V 400 300 200 100 0 200 T j = 25 C Vdr = V QNOM-0.1 V 0 0 100 200 300 mA 400 ΙQ Current Consumption Iq versus Output Current IQ (high load) Ιq Ιq T j = 25 C V Ι = 13.5 V 30 0.3 20 0.2 10 0.1 0 200 Semiconductor Group 300 400 mA ΙQ AED02268 T j = 25 C V Ι = 13.5 V 0.4 100 40 V 50 VΙ 30 mA 40 0 20 0.6 mA 0 10 Current Consumption Iq versus Output Current IQ (low load) AED02267 60 0 600 7 0 10 20 30 40 mA ΙQ 60 1998-11-01 TLE 4274 Typical Performance Characteristics (V50): Current Consumption Iq versus Input Voltage VI Output Voltage VQ versus Junction Temperature Tj AED01966 5.20 AED02269 30 V VQ Ιq 5.10 mA V Ι = 13.5 V 5.00 20 T j = 25 C R L = 20 Ω 4.90 4.80 10 4.70 4.60 -40 0 40 80 0 120 C 160 Tj Output Voltage VQ versus Input Voltage VI AED01968 V 20 30 50 V VΙ AED01977 3.5 mA Ι Ι 3.0 VQ 5 10 Input Current II versus Input Voltage VI 6 VQ 0 2.5 4 2.0 VΙ =VQ 1.5 3 T j = 25 C R L = 20 Ω T j = 25 C R L = 10 k Ω 1.0 2 0.5 1 0 0 0 2 Semiconductor Group 4 6 -2 -50 8 V 10 VΙ -25 0 25 V 50 VΙ 8 1998-11-01 TLE 4274 Typical Performance Characteristics for V85: Current Consumption Iq versus Input Voltage VI Output Voltage VQ versus Junction Temperature Tj AED01970 9.0 VQ AED02270 30 V Ιq mA V Ι = 13.5 V 8.5 20 T j = 25 C R L = 20 Ω 8.0 10 7.5 -40 0 40 80 0 120 C 160 Tj Output Voltage VQ versus Input Voltage VI 10 20 30 50 V VΙ Input Current II versus Input Voltage VI AED01972 12 VQ 0 AED01973 3.5 mA Ι Ι 3.0 V 10 VQ 2.5 8 2.0 VΙ =VQ 1.5 6 T j = 25 C R L = 34 Ω T j = 25 C R L = 8.5 k Ω 1.0 4 0.5 2 0 0 0 4 Semiconductor Group 8 12 -2 -50 16 V 20 VΙ -25 0 25 V 50 VΙ 9 1998-11-01 TLE 4274 Typical Performance Characteristics for V10: Current Consumption Iq versus Input Voltage VI Output Voltage VQ versus Junction Temperature Tj AED01974 10.5 VQ AED02270 30 V Ιq mA V Ι = 13.5 V 10.0 20 T j = 25 C R L = 20 Ω 9.5 10 9.0 -40 0 40 80 0 120 C 160 Tj Output Voltage VQ versus Input Voltage VI VQ V 20 30 50 V VΙ AED01977 3.5 mA Ι Ι 3.0 VQ 10 10 Input Current II versus Input Voltage VI AED01976 12 0 2.5 8 2.0 VΙ =VQ 1.5 6 T j = 25 C R L = 34 Ω T j = 25 C R L = 10 k Ω 1.0 4 0.5 2 0 0 0 4 Semiconductor Group 8 12 -2 -50 16 V 20 VΙ -25 0 25 V 50 VΙ 10 1998-11-01 TLE 4274 Package Outlines P-TO220-3-1 (Plastic Transistor Outline) 10 ±0.2 A 9.8 ±0.15 B 4.4 C 0...0.15 13.5 ±0.5 4.55 ±0.2 0.05 9.25 ±0.2 1.27±0.1 2.8 ±0.2 1) 13.4 15.65 ±0.3 17±0.3 8.5 1) 3.7 -0.15 0.5 ±0.1 3x 0.75 ±0.1 2.4 1.05 2.54 1) 0.25 M A B C GPT05155 Typical All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” Dimensions in mm Semiconductor Group 11 1998-11-01 TLE 4274 P-TO252-3-1 (Plastic Transistor Single Outline) 6.5 +0.15 -0.10 2.3 +0.05 -0.10 4.57 0.51 min 0.15 max per side 0.9 +0.08 -0.04 B 0.8 ±0.15 9.9 ±0.5 6.22 -0.2 1 ±0.1 A 5.4 ±0.1 3x 0.75 ±0.1 0...0.15 0.5 +0.08 -0.04 2.28 1 ±0.1 0.25 M A B 0.1 GPT09051 All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Semiconductor Group 12 Dimensions in mm 1998-11-01 TLE 4274 P-TO263-3-1 (Plastic Transistor Single Outline) 10 ±0.2 4.4 9.8 ±0.15 1.27 ±0.1 B 0.1 0.05 2.4 2.7 ±0.3 8 1) 8.5 4.7 ±0.5 (15) 9.25 ±0.2 1±0.3 A 1) 0...0.15 0.75 ±0.1 0.5 ±0.1 1.05 8˚ max. 2.54 5.08 M A B Typical All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Semiconductor Group 0.1 13 GPT09057 1) 0.25 Dimensions in mm 1998-11-01