DN2530 N-Channel, Depletion-Mode, Vertical DMOS FET Features Description • • • • • • The DN2530 is a low-threshold, depletion-mode, normally-on transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. High-input impedance Low-input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications • • • • • • • Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown-voltage, high-input impedance, low-input capacitance, and fast switching speeds are desired. Package Types DRAIN DRAIN SOURCE GATE TO-92 SOURCE DRAIN GATE TO-243AA (SOT-89) See Table 2-1 for pin information 2016 Microchip Technology Inc. DS20005451A-page 1 DN2530 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS† Drain-to-source voltage ......................................................................................................................................... BVDSX Drain-to-gate voltage.............................................................................................................................................BVDGX Gate-to-source voltage............................................................................................................................................ ±20V Operating and Storage Temperature .......................................................................................................... -55 to 150 °C † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC AND AC CHARACTERISTICS Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C Parameter Symbol Min Typ Max Units Conditions DC Parameters (Note 1, unless otherwise stated) BVDSX 300 - - V VGS= -5.0V, ID= 100 µA VGS(OFF) -1.0 - -3.5 V VDS= 25V, ID= 10 µA ∆VGS(OFF) - - -4.5 IGSS - - 100 - - 10 µA VDS= Max rating, VGS= -10V - - 1.0 mA VDS= 0.8 Max Rating, VGS= -10V, TA= 125°C (Note 2) IDSS 200 - - mA VGS= 0V, VDS= 25V RDS(ON) - - 12 Ω ∆RDS(ON) - - 1.1 %/°C Forward transconductance GFS 300 - - Input capacitance CISS - - 300 Common source output capacitance COSS - - 30 Reverse transfer capacitance CRSS - - 5 Turn-on delay time td(ON) - - 10 tr - - 15 td(OFF) - - 15 tf - - 20 VSD – – trr – 600 Drain-to-source breakdown voltage Gate-to-source off voltage VGS(OFF) change with temperature Gate body leakage current Drain-to-source leakage current Saturated drain-to-source current Static drain-to-source on-state resistance Change in RDS(ON) with temperature ID(OFF) mV/°C VDS= 25V, ID= 10 µA(Note 2) nA VGS= ±20V, VDS= 0V VGS= 0V, ID= 150 mA VGS= 0V, ID= 150 mA(Note 2) AC Parameters (Note 2) Rise time Turn-off delay time Fall time mmho VDS= 10V, ID= 150 mA pF VGS= -10V, VDS= 25V, f = 1 MHz ns VDD= 25V, ID= 150 mA, RGEN= 25Ω, 1.8 V VGS = -10V, ISD= 150 mA (Note 1) – ns VGS = -10V, ISD= 1.0A (Note 2) Diode Parameters Diode forward voltage drop Reverse recovery time Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. 2: Specification is obtained by characterization and is not 100% tested. DS20005451A-page 2 2016 Microchip Technology Inc. DN2530 TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C Parameter Symbol Min Typ Max Units Conditions TA -55 – 150 °C Thermal Resistance, TO-92 θja – 132 – °C/W Thermal Resistance, TO-243AA θja – 133 – °C/W Temperature Ranges Operating and Storage Temperature Package Thermal Resistances THERMAL CHARACTERISTICS Package ID(1) continuous (mA) ID pulsed (mA) Power Dissipation @TA = 25°C (W) IDR(1) (mA) IDRM (mA) TO-92 175 500 0.74 175 500 TO-243AA (SOT-89) 200 500 1.6 (2) 200 500 Note 1: ID continuous is limited by max rated TJ 2: Mounted on FR4 board, 25mm x 25mm x 1.57 mm 2.0 PIN DESCRIPTION The locations of the pins are listed in Package Types and Packaging Information. TABLE 2-1: PIN DESCRIPTION Pin # TO-92 Pin # TO-243AA Function 2 1 GATE 3 2, 4 DRAIN 1 3 SOURCE 2016 Microchip Technology Inc. DS20005451A-page 3 DN2530 3.0 FUNCTIONAL DESCRIPTION Figure 3-1 shows the switching waveform and test circuit for DN2530. Figure 3-2 and Figure 3-3 provide typical performance curves. 0V VDD 90% INPUT -10V Pulse Generator 10% t(ON) td(ON) VDD t(OFF) tr td(OFF) RGEN 10% 90% 0V FIGURE 3-1: OUTPUT tf 10% OUTPUT RL INPUT D.U.T. 90% Switching Waveforms and Test Circuit Product Summary BVDSX/BVDGX (V) RDS(ON) (max) (Ω) IDSS (min) (mA) 300 12 200 DS20005451A-page 4 2016 Microchip Technology Inc. DN2530 Output Characteristics 1.0 Saturation Characteristics 0.25 -0.5V VGS = 1.0V VGS = 1.0V 0.8 -1.0V 0V 0.5V 0.2 0.5V ID (amperes) ID (amperes) 0.6 0V 0.4 -0.5V 0.15 0.1 -1.5V -1.0V 0.2 0.05 -1.5V 0 0 50 100 150 200 0 250 0 1 2 4 5 Power Dissipation vs. Ambient Temperature Transconductance vs. Drain Current 0.5 3 VDS (volts) VDS (volts) 2.0 VDS = 10V TO-243AA 0.4 1.6 0.3 TA = 25°C PD (watts) GFS (siemens) TA = -55°C TA = 125°C 0.2 1.2 0.8 TO-92 0.4 0.1 0 0 0 0.05 0.1 0.15 0.2 0.25 0 25 50 100 125 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 1 75 TA (°C) ID (amperes) 1.0 Thermal Resistance (normalized) TO-92 (pulsed) TO-92 (DC) ID (amperes) 0.1 0.01 0.8 TO-243AA TA = 25°C PD = 1.6W 0.6 0.4 TO-92 TC = 25°C PD = 1.0W 0.2 TC = 25°C 0.001 1 10 100 1000 VDS (volts) FIGURE 3-2: 0 0.001 0.01 0.1 1.0 10 tP (seconds) Typical Performance Curves 2016 Microchip Technology Inc. DS20005451A-page 5 DN2530 BVDSS Variation with Temperature 1.10 On-Resistance vs. Drain Current 50 VGS = 0V VGS = -5V ID = 100mA 40 RDS(ON) (ohms) BVDSS (normalized) 1.05 1.00 0.95 0.90 30 20 10 0.85 -50 0 1.0 50 100 0 0 150 0.2 0.4 0.6 0.8 1.0 Tj (°C) ID (amps) Transfer Characteristics VGS(OFF) and RDS(ON) Variation with Temperature 2.5 VDS = 10V TA = -55°C 0.8 2 RDS(ON) @ ID = 150mA 0.6 VGS(th) (normalized) ID (amperes) 25°C 125°C 0.4 0.2 1.5 VGS(OFF) @ 10mA 1 0.5 0 -2 -1 0 1 0 -50 2 0 50 VGS (Volts) 200 100 150 Tj (°C) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 15 f = 1MHz VGS = -10V CISS 10 VGS (volts) C (picofarads) 150 100 50 VDS = 40V 5 VDS = 20V 250pF 0 COSS 152pf CRSS 0 0 10 20 30 40 VDS (Volts) FIGURE 3-3: DS20005451A-page 6 -5 0 1 2 3 4 5 QC (Nanocoulombs) Typical Performance Curves (continued) 2016 Microchip Technology Inc. DN2530 4.0 PACKAGING INFORMATION 4.1 Package Marking Information 3-lead TO-92 Example XXXXXX XXXX e3 YWWNNN DN2530 N3 e3 513343 Legend: XX...X Y YY WW NNN e3 * Note: Example 3-lead TO-243AA * (SOT-89) XXXXYWW NNN DN5T513 343 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 2016 Microchip Technology Inc. DS20005451A-page 7 DN2530 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Side View Top View Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. Symbol Dimensions (mm) A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. DS20005451A-page 8 2016 Microchip Technology Inc. DN2530 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. 2016 Microchip Technology Inc. DS20005451A-page 9 DN2530 APPENDIX A: REVISION HISTORY Revision A (January 2016) • Converted Supertex Doc #DSFP-DN2530 to Microchip DS20005451A. • Removed 2000/Reel option for TO-92 package. DS20005451A-page 10 2016 Microchip Technology Inc. DN2530 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device - XX X - Package Environmental Options X Media Type Device: DN2530 = N-Channel, Depletion-Mode, Vertical DMOS FET Package: N3 N8 = TO-92, 3-lead = TO-243AA (SOT-89), 3-lead Environmental G = Lead (Pb)-free/ROHS-compliant package Media Type: (blank) = 1000/Reel for N3 packages = 2000/Reel for N8 packages 2016 Microchip Technology Inc. Examples: a) DN2530N3-G b) DN2530N8-G TO-92 package, 1000/reel TO-243AA package, 2000/reel DS20005451A-page 11 Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITYMANAGEMENTSYSTEM CERTIFIEDBYDNV == ISO/TS16949== DS20005451A-page 12 Trademarks The Microchip name and logo, the Microchip logo, AnyRate, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, ETHERSYNCH, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker, Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2016, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. ISBN: 978-1-5224-0250-3 2016 Microchip Technology Inc. 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