TP5322 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
TP5322
P-Channel Enhancement-Mode
Vertical DMOS FET
General Description
Features
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The Supertex TP5322 is a low threshold enhancementmode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
High input impedance
Low threshold (-2.4V max.)
Low input capacitance (110pF max.)
Fast switching speeds
Low on-resistance
Low input and output leakage
Free from secondary breakdown
Applications
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Logic level interfaces - ideal for TTL and CMOS
Battery operated systems
Photo voltaic devices
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Part Number
Product Summary
Package Option
Packing
TP5322K1-G
TO-236AB (SOT-23)
3000/Reel
TP5322N8-G
3-Lead TO-92
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package
θja
TO-236AB (SOT-23)
203OC/W
TO-243AA (SOT-89)
133OC/W
-220V
RDS(ON)
(max)
12Ω
ID(ON)
VGS(th)
-700mA
-2.4V
(min)
(max)
DRAIN
DRAIN
Parameter
Typical Thermal Resistance
BVDSS/BVDGS
Pin Configuration
Absolute Maximum Ratings
Operating and storage temperature
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
SOURCE
SOURCE
DRAIN
GATE
GATE
TO-236AB (SOT-23)
TO-243AA (SOT-89)
Product Marking
P3CW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-236AB (SOT-23)
TP3CW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Doc.# DSFP-TP5322
C081613
Supertex inc.
www.supertex.com
TP5322
Thermal Characteristics
ID
Package
(continuous)†
ID
Power Dissipation
(pulsed)
@TA = 25OC
-120mA
-700mA
0.36W
TO-236AB (SOT-23)
TO-243AA (SOT-89)
-260mA
-0.90mA
Notes:
† ID (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (T
A
Sym
1.6W
‡
IDR†
IDRM
-120mA
-700mA
-260mA
-0.90mA
= 25OC unless otherwise specified)
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
-220
-
-
V
VGS = 0V, ID = -2.0mA
VGS(TH)
Gate threshold voltage
-1.0
-
-2.4
V
VGS = VDS, ID = -1.0mA
Change in VGS(TH) with temperature
-
-
4.5
mV/ C
VGS = VDS, ID = -1.0mA
IGSS
Gate body leakage current
-
-
-100
nA
VGS = ±20V, VDS = 0V
-
-
-10
µA
ID(SS)
Zero gate voltage drain current
VDS = Max rating, VGS = 0V
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON)
On-state drain current
-0.7
-0.95
-
A
VGS = -10V, VDS = -25V
-
10
15
8.0
12
-
-
1.7
%/OC
VGS = -10V, ID = -200mA
100
250
-
mmho
VDS = -25V, ID = -200mA
ΔVGS(TH)
Static drain-to-source on-state resistance
RDS(ON)
ΔRDS(ON)
Change in RDS(ON) with temperature
GFS
Forward transconductance
CISS
Input capacitance
-
110
COSS
Common source output capacitance
-
45
CRSS
Reverse transfer capacitance
-
20
td(ON)
Turn-on delay time
-
-
10
Rise time
-
-
15
Turn-off delay time
-
-
20
Fall time
-
-
15
Diode forward voltage drop
-
-
Reverse recovery time
-
300
tr
td(OFF)
tf
VSD
trr
O
Ω
Conditions
VGS = -4.5V, ID = -100mA
VGS = -10V, ID = -200mA
pF
VGS = 0V,
VDS = -25V,
f = 1.0MHz
ns
VDD = -25V,
ID = -700mA,
RGEN = 25Ω,
-1.8
V
VGS = 0V, ISD = -500mA
-
ns
VGS = 0V, ISD = -500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
td(ON)
0V
OUTPUT
VDD
Doc.# DSFP-TP5322
C081613
tr
td(OFF)
90%
10%
RGEN
90%
t(OFF)
t(ON)
D.U.T.
tf
INPUT
OUTPUT
RL
90%
10%
2
VDD
Supertex inc.
www.supertex.com
TP5322
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
D
3
E1 E
Gauge
Plane
0.25
1
e
b
e1
Seating
Plane
L
L1
2
View B
Top View
View B
A
A
A2
Seating
Plane
A1
Side View
Symbol
Dimension
(mm)
View A - A
A
A
A1
A2
b
D
E
E1
MIN
0.89
0.01
0.88
0.30
2.80
2.10
1.20
NOM
-
-
0.95
-
2.90
-
1.30
MAX
1.12
0.10
1.02
0.50
3.04
2.64
1.40
e
e1
L
L1
0.20
†
0.95
BSC
1.90
BSC
0.50
0.60
0.54
REF
θ
0O
8O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO236ABK1, Version C041309.
Doc.# DSFP-TP5322
C081613
3
Supertex inc.
www.supertex.com
TP5322
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
L
1
2
E1
3
b
b1
e
A
e1
Top View
Symbol
Dimensions
(mm)
Side View
A
b
b1
C
D
D1
E
E1
e
MIN
1.40
0.44
0.36
0.35
4.40
1.62
2.29
2.00†
NOM
-
-
-
-
-
-
-
-
MAX
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
1.50
BSC
e1
3.00
BSC
H
L
3.94
0.73†
-
-
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TP5322
C081613
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com