2N7002 DATA SHEET (09/10/2008) DOWNLOAD

Supertex inc.
2N7002
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
General Description
►► Free from secondary breakdown
►► Low power drive requirement
►► Ease of paralleling
►► Low CISS and fast switching speeds
►► Excellent thermal stability
►► Integral source-drain diode
►► High input impedance and high gain
The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Applications
►► Motor controls
►► Converters
►► Amplifiers
►► Switches
►► Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Part Number
2N7002-G
Product Summary
Package Option
Packing
TO-236AB (SOT-23)
3000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±30V
Typical Thermal Characteristics
θja
TO-236AB (SOT-23)
203OC/W
RDS(ON)
ID(ON)
60V
7.5Ω
500mA
(V)
(max)
(min)
DRAIN
SOURCE
GATE
-55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package
BVDSX/BVDGS
Pin Configuration
Absolute Maximum Ratings
Operating and storage temperature
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
TO-236AB (SOT-23)
Product Marking
702W
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-236AB (SOT-23)
* Mounted on FR4 board; 25mm x 25mm x 1.57mm
Doc.# DSFP-2N7002
C062813
Supertex inc.
www.supertex.com
2N7002
Thermal Characteristics
ID
Package
(continuous)†
(pulsed)
ID
Power Dissipation
@TA = 25OC
IDR†
IDRM
115mA
800mA
0.36W
115mA
800mA
TO-236AB
Notes:
† ID (continuous) is limited by max rated Tj.
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
BVDSS
VGS(th)
∆VGS(th)
IGSS
Min
Typ
Max
Units
Conditions
Drain-to-Source breakdown voltage
60
-
-
V
VGS = 0V, ID = 10µA
Gate threshold voltage
1.0
-
2.5
V
VGS = VDS, ID = 250µA
Change in VGS(th) with temperature
-
-
-5.5
mV/OC
VGS = VDS, ID = 250µA
Gate body leakage current
-
-
±100
nA
VGS = ±20V, VDS = 0V
-
-
1.0
-
-
500
VGS = 0V, VDS = Max rating
IDSS
Zero Gate voltage drain current
ID(ON)
On-state Drain current
500
-
-
RDS(ON)
Static Drain-to-Source
on-state resistance
-
-
7.5
-
-
7.5
Change in RDS(ON) with temperature
-
-
1.0
%/OC
VGS = 10V, ID = 500mA
80
-
-
mmho
VDS = 25V, ID = 500mA
∆RDS(ON)
GFS
Forward transconductance
CISS
Input capacitance
-
-
50
COSS
Common Source output capacitance
-
-
25
CRSS
Reverse transfer capacitance
-
-
5.0
t(ON)
Turn-on time
-
-
20
t(OFF)
Turn-off time
-
-
20
VSD
Diode forward voltage drop
-
1.2
Reverse recovery time
-
400
trr
µA
VGS = 0V, VDS = 0.8Max rating,
TA = 125OC
mA
VGS = 10V, VDS = 25V
Ω
VGS = 5.0V, ID = 50mA
VGS = 10V, ID = 500mA
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
ns
VDD = 30V, ID = 200mA,
RGEN = 25Ω
-
V
VGS = 0V, ISD = 200mA
-
ns
VGS = 0V, ISD = 800mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
OUTPUT
0V
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VDD
90%
t(OFF)
tr
td(OFF)
OUTPUT
RGEN
tf
10%
10%
90%
RL
INPUT
D.U.T.
90%
2
Supertex inc.
www.supertex.com
2N7002
Typical Performance Curves
Output Characteristics
2.0
Saturation Characteristics
2.0
VGS = 10V
1.6
VGS = 10V
1.6
9V
ID (amperes)
ID (amperes)
9V
1.2
8V
0.8
7V
1.2
8V
0.8
7V
6V
0.4
5V
4V
3V
0
0
10
20
30
40
6V
0.4
5V
4V
0
0
50
2
4
VDS (volts)
8
10
3V
VDS (volts)
Transconductance vs. Drain Current
0.5
6
0.5
Power Dissipation vs. Case Temperature
VDS = 25V
0.4
TA = -55OC
0.3
PD (watts)
GFS (seimens)
0.4
25OC
0.2
125OC
SOT-23
0.2
0.1
0.1
0
0.3
0
0.2
0.4
0.6
0.8
0
10
0
25
50
ID (amperes)
1.0
75
100
125
150
TC (OC)
Maximum Rated Safe Operating Area
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
SOT-23 (pulsed)
SOT-23 (DC)
ID (amperes)
0.1
0.01
TA = 25OC
0.001
0.1
1.0
10
0.6
0.4
0.001
3
SOT-23
TA = 25OC
PD = 0.36W
0.2
0
100
VDS (volts)
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0.8
0.01
0.1
tp (seconds)
1.0
10
Supertex inc.
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2N7002
Typical Performance Curves (cont.)
1.1
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
10
VGS = 5.0V
RDSS(ON) (ohms)
BVDSS (normalized)
8
1.0
VGS = 10V
6
4
2
2.0
0
50
0
150
0
0.5
1.0
1.5
2.0
2.5
O
Tj ( C)
ID (amperes)
Transfer Characteristics
V(th) and RDS Variation with Temperature
2.0
VDS = 25V
1.4
1.6
TA = -55OC
VGS(th) (normalized)
ID (amperes)
100
1.2
25OC
0.8
125OC
RDS(ON) @ 10V, 0.5A
1.6
1.2
1.2
1.0
0.8
VGS(th) @ 1.0mA
0.8
RDS(ON) (normalized)
0.9
-50
0.4
0.4
0.6
0
0
2
4
6
8
-50
10
0
50
VGS (volts)
Tj (OC)
Capacitance vs. Drain-to-Source Voltage
50
Gate Drive Dynamic Characteristics
10
f = 1.0MHz
VDS = 10V
90 pF
CISS
VGS (volts)
C (picofarads)
8
25
VDS = 40V
4
30 pF
CRSS
0
10
20
30
0
40
0
0.2
0.4
0.6
0.8
1.0
QG (nanocoulombs)
VDS (volts)
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6
2
COSS
0
0
150
100
4
Supertex inc.
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2N7002
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
D
3
E1 E
Gauge
Plane
0.25
1
e
b
e1
Seating
Plane
L
L1
2
View B
Top View
View B
A
A
A2
Seating
Plane
A1
Side View
Symbol
Dimension
(mm)
View A - A
A
A
A1
A2
b
D
E
E1
MIN
0.89
0.01
0.88
0.30
2.80
2.10
1.20
NOM
-
-
0.95
-
2.90
-
1.30
MAX
1.12
0.10
1.02
0.50
3.04
2.64
1.40
e
e1
L
L1
0.20
†
0.95
BSC
1.90
BSC
0.50
0.60
0.54
REF
θ
0O
8O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO236ABK1, Version C041309.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
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C062813
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1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com