BA 886 Silicon PIN Diode BA 886 Preliminary Data ● Current-controlled RF resistor for switching and attenuating applications ● Frequency range above 1 MHz ● Designed for low IM distortion Type Marking Ordering Code (tape and reel) BA 886 PC Q62702-A932 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Forward current IF 50 mA Operating temperature range Top – 55 … + 125 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ Thermal Resistance Junction - ambient2) 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 450 K/W BA 886 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Forward voltage IF = 50 mA VF – – 1.15 V Reverse current VR = 50 V IR – – 50 nA Diode capacitance f = 1 MHz, VR = 50 V f= 100 MHz, VR = 0 V CT – – 0.23 0.2 0.35 – Forward resistance f = 100 MHz IF = 10 µA IF = 1 mA IF = 10 mA rf Zero bias conductance f = 100 MHz, VR = 0 V Series inductance Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz pF Ω – – 6.5 2400 58 7.8 – – 10 gp – 40 – µS LS – 2 – nH Forward resistance rf = f (IF) f = 100 MHz