Silicon Crossover Ring Quad Schottky Diode ● BAT 14-099R Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) BAT 14-099R S8 Pin Configuration Q62702-A0042 Package1) SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Forward current IF 90 mA Power dissipation, TS ≤ 70 ˚C Ptot 100 mW Storage temperature range Tstg – 55 … + 150 ˚C Operating temperature range Top – 55 … + 150 Junction – ambient2) Rth JA ≤ 1020 Junction – soldering point Rth JS ≤ 780 Thermal Resistance per Diode 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm. Semiconductor Group 1 02.96 BAT 14-099R Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – 0.4 0.48 – – Forward voltage IF = 1 mA IF = 10 mA VF V Forward voltage matching1) IF = 10 mA ∆VF – – 20 mV Diode capacitance VR = 0, f= 1 MHz CT – 0.38 – pF Forward resistance IF = 10 mA / 50 mA RF – 5.5 – Ω Forward current IF = f (VF) 1) ∆VF Forward current IF = f (TS; TA*) *Package mounted on alumina is the difference between the lowest and the highest VF in the component. Semiconductor Group 2