INFINEON BAT14-099R

Silicon Crossover Ring Quad Schottky Diode
●
BAT 14-099R
Medium barrier diode for double balanced mixers,
phase detectors and modulators
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
(tape and reel)
BAT 14-099R S8
Pin Configuration
Q62702-A0042
Package1)
SOT-143
Maximum Ratings per Diode
Parameter
Symbol
Values
Unit
Forward current
IF
90
mA
Power dissipation, TS ≤ 70 ˚C
Ptot
100
mW
Storage temperature range
Tstg
– 55 … + 150 ˚C
Operating temperature range
Top
– 55 … + 150
Junction – ambient2)
Rth JA
≤
1020
Junction – soldering point
Rth JS
≤
780
Thermal Resistance per Diode
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
Semiconductor Group
1
02.96
BAT 14-099R
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
–
–
0.4
0.48
–
–
Forward voltage
IF = 1 mA
IF = 10 mA
VF
V
Forward voltage matching1)
IF = 10 mA
∆VF
–
–
20
mV
Diode capacitance
VR = 0, f= 1 MHz
CT
–
0.38
–
pF
Forward resistance
IF = 10 mA / 50 mA
RF
–
5.5
–
Ω
Forward current IF = f (VF)
1) ∆VF
Forward current IF = f (TS; TA*)
*Package mounted on alumina
is the difference between the lowest and the highest VF in the component.
Semiconductor Group
2