NPN Silicon RF Transistors BF 840 BF 841 ● Suitable for common emitter RF, IF amplifiers ● Low collector-base capacitance due to contact shield diffusion ● Low output conductance Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BF 840 BF 841 NC ND Q62702-F1240 Q62702-F1287 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 Base current IB 2 Total power dissipation, TA ≤ 25 ˚C2) Ptot 280 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient2) 1) 2) 450 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 840 BF 841 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR) CE0 40 – – Emitter-base breakdown voltage IE = 10 µA, IB = 0 V(BR) EB0 4 – – Collector-base cutoff current VCB = 20 V, IE = 0 ICB0 – – 100 DC current gain, IC = 1 mA, VCE = 10 V BF 840 BF 841 hFE Base-emitter voltage IC = 1 mA, VCE = 10 V V nA – 65 35 – – 220 125 VBE – 0.7 – V Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz fT – 380 – MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Ccb – 0.3 – pF Noise figure IC = 1 mA, VCE = 10 V, f = 100 kHz RS = 200 Ω F – 1.7 – dB Output conductance IC = 1 mA, VCE = 10 V, f = 0.5 MHz g22e – 4 – µS AC Characteristics Semiconductor Group 2