RV1C002UN RV1C002UN Datasheet Nch 20V 150mA Small Signal MOSFET lOutline VDSS 20V RDS(on) (Max.) 2.0W ID 150mA PD 100mW lFeatures (3) VML0806 (2) (1) lInner circuit 1) The world smallest Package (0806size). (1) Source (2) Gate (3) Drain 2) Low voltage drive(1.2V) makes this device ideal for partable equipment. 3) Drive circuits can be simple. *1 BODY DIODE *2 ESD PROTECTION DIODE 4) Built-in G-S Protection Diode. lPackaging specifications Packaging Taping Reel size (mm) lApplication 180 Tape width (mm) Switching 8 Type Basic ordering unit (pcs) 8,000 Taping code T2CL Marking RY lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 20 V Continuous drain current ID *1 150 mA ID,pulse *2 600 mA Gate - Source voltage VGSS 8 V Power dissipation PD *3 100 mW Tj 150 °C Tstg -55 to +150 °C Pulsed drain current Junction temperature Range of storage temperature lThermal resistance Values Parameter Symbol RthJA *3 Thermal resistance, junction - ambient www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/10 Unit Min. Typ. Max. - - 1250 °C/W 2012.08 - Rev.A Data Sheet RV1C002UN lElectrical characteristics(Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol Conditions Unit Min. Typ. Max. V(BR)DSS VGS = 0V, ID = 1mA 20 - - V Zero gate voltage drain current IDSS VDS = 20V, VGS = 0V - - 1 mA Gate - Source leakage current IGSS VGS = 8V, VDS = 0V - - 10 mA VDS = 10V, ID = 100mA 0.3 - 1.0 V VGS=4.5V, ID=150mA - 1.4 2.0 VGS=2.5V, ID=150mA - 1.7 2.6 VGS=1.8V, ID=150mA - 2.2 3.4 VGS=1.5V, ID=20mA - 2.7 5.4 VGS=1.2V, ID=10mA - 3.8 11.4 VGS=4.5V, ID=150mA, Tj=125°C - 2.3 4.6 110 - - Gate threshold voltage Static drain - source on - state resistance Transconductance VGS (th) RDS(on) *4 gfs *4 VDS=10V, ID=150mA W mS *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Each therminal mounted on a recommended land *4 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/10 2012.08 - Rev.A Data Sheet RV1C002UN lElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 12 - Output capacitance Coss VDS = 10V - 5 - Reverse transfer capacitance Crss f = 1MHz - 3 - VDD ⋍ 10V, VGS = 4.5V - 3 - tr *4 ID =75mA - 4 - td(off) *4 RL = 133W - 12 - tf *4 RG = 10W - 25 - Turn - on delay time Rise time Turn - off delay time Fall time td(on) *4 pF ns lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Continuous source current Symbol IS *1 Pulsed source current ISM *2 Forward voltage VSD www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. *4 Conditions Unit Min. Typ. Max. - - 80 mA - - 600 mA - - 1.2 V Ta = 25°C VGS = 0V, Is = 150mA 3/10 2012.08 - Rev.A Data Sheet RV1C002UN lElectrical characteristic curves Fig.2 Drain Current Derating Curve 120 1.2 100 1 Drain Current Dissipation : ID/ID max. (%) Power Dissipation : PD/PD max. [%] Fig.1 Power Dissipation Derating Curve 80 60 40 20 0 0.8 0.6 0.4 0.2 0 0 50 100 150 200 -25 Junction Temperature : Tj [°C] 25 50 75 100 125 150 Junction Temperature : Tj [°C] Fig.3 Typical Output Characteristics(I) Fig.4 Typical Output Characteristics(II) 0.15 0.15 VGS= 4.5V VGS= 2.5V VGS= 1.8V VGS= 1.5V 0.1 VGS= 4.5V VGS= 2.5V VGS= 1.8V VGS= 1.5V Ta=25ºC Pulsed Drain Current : ID [A] Drain Current : ID [A] 0 VGS=1.2V 0.05 VGS=1.2V 0.1 0.05 VGS=1.0V VGS=1.0V Ta=25ºC Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 Drain - Source Voltage : VDS [V] 4/10 2012.08 - Rev.A Data Sheet RV1C002UN lElectrical characteristic curves Fig.6 Typical Transfer Characteristics 1 50 VDS= 10V VGS = 0V ID = 1mA Pulsed 45 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.5 Breakdown Voltage vs. Junction Temperature 40 35 30 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 25 20 0.001 -50 0 50 100 150 0 1 1.5 2 Gate - Source Voltage : VGS [V] Junction Temperature : Tj [°C] Fig.8 Transconductance vs. Drain Current Fig.7 Gate Threshold Voltage vs. Junction Temperature 10 2.0 VDS= 10V VDS = 10V ID = 1mA Pulsed 1.8 1.6 Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 0.5 1.4 1.2 1.0 0.8 0.6 0.4 1 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.2 0.0 -50 0 50 100 0.01 0.01 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0.1 1 Drain Current : ID [A] 5/10 2012.08 - Rev.A Data Sheet RV1C002UN lElectrical characteristic curves Fig.9 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.10 Static Drain - Source On - State Resistance vs. Drain Current(I) 100 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] 10 Ta=25ºC 9 8 ID= 10mA 7 ID= 150mA 6 5 4 3 2 1 0 0 2 4 6 8 Ta=25ºC 1 0 0.001 Gate - Source Voltage : VGS [V] 0.1 1 Fig.12 Static Drain - Source On - State Resistance vs. Drain Current(II) 100 VGS = 10V ID = 150mA Pulsed 3 2 1 0 -50 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [W] 5 Static Drain - Source On-State Resistance : RDS(on) [W] 0.01 Drain Current : ID [A] Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature 4 VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 10 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.01 0.1 1 Drain Current : ID [A] Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. VGS = 4.5V 6/10 2012.08 - Rev.A Data Sheet RV1C002UN lElectrical characteristic curves Fig.13 Static Drain-Source On-State Resistance vs. Drain Current(III) Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(IV) 100 VGS = 2.5V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 10 1 0.1 0.01 0.1 1 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] 100 VGS = 1.8V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 10 1 0.1 0.01 0.1 Drain Current : ID [A] Drain Current : ID [A] Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(VI) Static Drain - Source On-State Resistance : RDS(on) [W] 100 VGS = 1.5V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.001 0.01 0.1 1 Static Drain - Source On-State Resistance : RDS(on) [W] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(V) 10 100 VGS = 1.2V 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.001 0.01 0.1 1 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 7/10 2012.08 - Rev.A Data Sheet RV1C002UN lElectrical characteristic curves Fig.18 Switching Characteristics Fig.17 Typical Capacitance vs. Drain - Source Voltage 100 1000 Ta=25ºC VDD= 10V VGS= 4.5V RG=10W 10 Ciss Coss Switching Time : t [ns] Capacitance : C [pF] Ta=25ºC f=1MHz VGS=0V 100 tf td(off) 10 Crss tr 1 1 0.01 0.1 1 10 0.01 100 td(on) 0.1 1 Drain Current : ID [A] Drain - Source Voltage : VDS [V] Fig.19 Source Current vs. Source Drain Voltage 1 Source Current : IS [A] VGS=0V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 0.001 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 8/10 2012.08 - Rev.A Data Sheet RV1C002UN lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms lNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 9/10 2012.08 - Rev.A Data Sheet RV1C002UN lDimensions (Unit : mm) b1 D E e1 L VML0806 L b e l1 A1 l2 A l1 b3 b2 Patterm of terminal position areas DIM A A1 b b1 D E e e1 L DIM b2 b3 l1 l2 MILIMETERS MIN MAX 0.33 0.39 0.00 0.05 0.10 0.20 0.45 0.55 0.55 0.65 0.75 0.85 0.35 0.50 0.15 0.25 MILIMETERS MIN MAX 0.25 0.70 0.30 0.90 INCHES MIN 0.013 0.000 0.004 0.018 0.022 0.030 MAX 0.015 0.002 0.008 0.022 0.026 0.033 0.014 0.020 0.006 0.010 INCHES MIN - MAX 0.010 0.028 0.012 0.035 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/10 2012.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. 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