FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16223 Generic Copy Issue Date: 10-Jul-2014 TITLE: Qualification of TSMC Wafer Fab for Production of NCP372MUAITXG PROPOSED FIRST SHIP DATE: 15-Oct-2014 or earlier with customer approval AFFECTED CHANGE CATEGORY(S): ON Semi Fab site/ contractor Fab site FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. implementation of the change. FPCNs are issued at least 90 days prior to ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: ON Semiconductor is pleased to announce that the NCP372MUAITXG is now qualified for production at the TSMC wafer fab in Taiwan. Upon expiration or approval of the Final PCN, devices may be supplied from the TSMC wafer fab. The TSMC wafer fab is compliant to ISO9001:2000, ISO/TS16949:2004, and ISO14001:2004. The controller die of the NCP372MUAITXG was previously manufactured at ON Semiconductor’s Piestany, Slovakia wafer fab on the 0.8um PS5LV process. Due to the previously-announced closure of the Piestany fab, the controller die has now been re-designed and qualified to run at TSMC on the 0.25um BCD process. Device performance is the same between the two fab sites and continues to fully meet datasheet specifications. No changes to packaging occur as a result of this wafer fab qualification. The NCP372MUAITXG will continue to be assembled and tested in existing, qualified locations. Issue Date: 10-Jul-2014 Rev. 06-Jan-2010 Page 1 of 2 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16223 RELIABILITY DATA SUMMARY: Reliability Test Results: Test Name Test Conditions End Point Req’s Test Results (rej/ ss) (rej/ ss) Read Point Result NCP370 Result Result Result NCP373 NCP373 NCP372 0.4A 1.3A Prep Sample preparation and initial part testing various --- Initial Electrical done HTOL High Temp Op Life Ta=65°C, Tj=145°C c = 0, Room 504hrs 1008hrs 0/80 0/80 HTSL High Temp Storage Life Ta=150°C c = 0, Room 504hrs 1008hrs 0/80 0/80 +/-2000V Pass +/-200V Pass ESD HBM Results MM LU Latch-up Class II / 85°C Results LU+>100mA LU ->100mA Pass Pass ED Electrical Distribution Critical Parameters -40 / 25 / +85°C Results CPK>=1.67 Pass done Pass (rej/ ss) done done Pass Pass ELECTRICAL CHARACTERISTIC SUMMARY: The NCP372MUAITXG from TSMC fab has electrical performance comparable to the previous fab. The device continues to successfully meet all datasheet specifications. Characterization data is available upon request. CHANGED PART IDENTIFICATION: NCP372MUAITXG devices with date codes representing WW 42, 2014 or later will be assembled with die sourced from the TSMC wafer fab, unless earlier customer approval is obtained. If early customer approval is obtained, devices with date codes of WW 31, 2014 or later will be assembled with die from the TSMC wafer fab. List of affected General Parts: NCP372MUAITXG Issue Date: 10-Jul-2014 Rev. 06-Jan-2010 (rej/ ss) Page 2 of 2