SKT 1200/12 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 1200 A Tc = 100 °C 840 A Tj = 25 °C 30000 A Tj = 125 °C 25500 A Tj = 25 °C 4500000 A²s Tj = 125 °C 3251250 A²s VRSM 1200 V VRRM 1200 V Chip IT(AV) ITSM i2t Capsule Thyristor sinus 180° 10 ms 10 ms VDRM Line Thyristor SKT 1200/12 E (di/dt)cr Tj = 125 °C (dv/dt)cr Tj = 125 °C Tj Features Typical Applications* • DC motor control (e. g. for machine tools) • Controlled rectifiers (e. g. for battery charging) • AC controllers (e. g. for temperature control) • Recommended snubber network e. g. for VVRMS ≤ 400 V: R = 33 /32 W, C = 1 µF V 125 A/µs 1000 V/µs -40 ... +125 °C -40 ... +130 °C Module Tstg • Hermetic metal case with ceramic insulator • Capsule package for double sided cooling • Shallow design with single sided cooling • International standard case • Off-state and reverse voltages up to 1800 V • Amplifying gate 1200 Characteristics Symbol Conditions min. typ. max. Unit Chip VT Tj = 25 °C, IT = 3600 A 1.65 V VT(TO) Tj = 125 °C 0.95 V rT Tj = 125 °C 0.18 m IDD;IRD Tj = 125 °C, VDD = VDRM; VRD = VRRM 160 mA tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 µs tgr VD = 0.67 * VDRM 2 µs tq Tj = 125 °C IH Tj = 25 °C IL Tj = 25 °C, RG = 33 VGT Tj = 25 °C, d.c. 3 250 100 250 µs 250 500 mA 500 2000 mA V IGT Tj = 25 °C, d.c. VGD Tj = 125 °C, d.c. 0.25 V IGD Tj = 125 °C, d.c. 10 mA Rth(j-c) Rth(j-c) Rth(j-c) continuous DC sin. 180° rec. 120° mA SSC K/W DSC 0.021 SSC 0.054 K/W DSC 0.0225 K/W SSC 0.06 K/W DSC 0.027 K/W K/W Module Rth(c-s) SSC 0.01 K/W DSC 0.005 K/W F 22 25 a KN m/s² w 480 g SKT © by SEMIKRON Rev. 0 – 08.07.2013 1 SKT 1200/12 E Fig. 1L: Power dissipation vs. on-state current Fig. 1R: Power dissipation vs. ambient temperature Fig. 2L: Rated on-state current vs. case temperature Fig. 2R: Rated on-state current vs. case temperature Fig. 3: Recovered charge vs. current decrease Fig. 4: Transient thermal impedance vs. time 2 Rev. 0 – 08.07.2013 © by SEMIKRON SKT 1200/12 E Fig. 5: Thermal resistance vs. conduction angle Fig. 6: On-state characteristics Fig. 7: Power dissipation vs. on-state current Fig. 8: Surge overload current vs. time Fig. 9: Gate trigger characteristics © by SEMIKRON Rev. 0 – 08.07.2013 3 SKT 1200/12 E HK/Gate leads: ID-No.:33901270 B14 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 4 Rev. 0 – 08.07.2013 © by SEMIKRON