SKKT 570/18 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 570 A Tc = 100 °C 435 A Chip IT(AV) ITRMS ITSM SEMIPACK® 5 Thyristor Modules SKKT 570/18 E i2t sinus 180° continuous operation 10 ms 10 ms Tj = 25 °C 1000 A 19000 A Tj = 135 °C 15500 A Tj = 25 °C 1805000 A²s Tj = 135 °C 1201250 A²s VRSM 1900 V VRRM 1800 V VDRM 1800 V (di/dt)cr Tj = 135 °C 250 A/µs (dv/dt)cr Tj = 135 °C 1000 V/µs -40 ... 135 °C -40 ... 125 °C 1 min 3000 V 1s 3600 V Tj Module Features Tstg • Heat transfer through aluminium nitride ceramic isolated metal baseplate • Precious metal pressure contacts for high reliability • Thyristor with amplifying gate • UL recognized, file no. E 63 532 Typical Applications* • AC motor softstarters • Input converters for AC inverter drives • DC motor control (e.g. for machine tools) • Temperature control (e.g. for ovens, chemical, processes) • Professionals light dimming (studios, theaters) Visol a.c.; 50 Hz; r.m.s. Characteristics Symbol Conditions min. typ. max. Unit Chip VT Tj = 25 °C, IT = 1700 A 1.44 V VT(TO) Tj = 135 °C 0.78 V rT Tj = 135 °C 0.32 mΩ 225 mA IDD;IRD Tj = 135 °C, VDD = VDRM; VRD = VRRM tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 µs tgr VD = 0.67 * VDRM 2 µs tq Tj = 135 °C 200 µs IH Tj = 25 °C 150 500 mA IL Tj = 25 °C, RG = 33 Ω 300 2000 mA VGT Tj = 25 °C, d.c. 3 V IGT Tj = 25 °C, d.c. 200 mA VGD Tj = 135 °C, d.c. 0.25 V IGD Tj = 135 °C, d.c. 10 mA per chip 0.069 K/W per module 0.034 K/W per chip 0.072 K/W per module 0.036 K/W per chip 0.077 K/W per module 0.038 K/W 0.02 K/W 0.01 K/W Rth(j-c) Rth(j-c) Rth(j-c) continuous DC sin. 180° rec. 120° Module Rth(c-s) chip module Ms to heatsink M6 4.25 5.75 Nm Mt to heatsink M10 10.2 13.8 Nm 5 * 9,81 m/s² a w 1400 g SKKT © by SEMIKRON Rev. 2 – 09.12.2014 1 SKKT 570/18 E Fig. 1L: Power dissipation per thyristor vs. on-state current Fig. 1R: Power dissipation per thyristor vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Max. power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature 2 Rev. 2 – 09.12.2014 © by SEMIKRON SKKT 570/18 E Fig. 4L: Power dissipation of three modules vs. direct and rms current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time © by SEMIKRON Rev. 2 – 09.12.2014 3 SKKT 570/18 E Fig. 9: Gate trigger characteristics SKKT SEMIPACK 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 4 Rev. 2 – 09.12.2014 © by SEMIKRON