BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two (galvanic) internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ) • Pb-free (RoHS compliant) package C1 B2 E2 6 5 4 • Qualified according AEC Q101 R2 R1 TR2 TR1 R1 R2 1 2 3 E1 B1 C2 Tape loading orientation EHA07176 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device Top View 654 W1s Position in tape: pin 1 opposite of feed hole side 123 Direction of Unreeling EHA07193 Type BCR22PN Marking WPs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings for NPN and PNP Types Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 60 Input reverse voltage Vi(rev) 10 DC collector current IC 100 mA Total power dissipation, TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point1) 1For calculation of R RthJS ≤ 140 K/W thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-07-28 BCR22PN Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 350 µA hFE 50 - - - - - 0.3 V Vi(off) 0.8 - 1.5 Vi(on) 1 - 2.5 Input resistor R1 15 22 29 kΩ Resistor ratio R1/R2 0.9 1 1.1 - fT - 130 - MHz Ccb - 3 - pF DC Characteristics for NPN and PNP Types Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V AC Characteristics for NPN and PNP Types Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% 2 2011-07-28 BCR22PN NPN Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC ), hFE = 20 10 3 1 V VCEsat hFE 0.8 10 2 0.7 0.6 -40 °C -25 °C 25 °C 85 °C 125 °C 0.5 0.4 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C 0.3 0.2 0.1 10 0 -4 10 10 -3 10 -2 A 10 0 -3 10 -1 10 -2 A 10 IC IC Input on Voltage Vi(on) = f (IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) 10 1 10 2 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C V Vi(off) Vi(on) V -1 -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 10 0 10 -1 -5 10 10 -4 10 -3 10 -2 A 10 10 -1 -5 10 -1 IC 10 -4 10 -3 10 -2 A 10 IC 3 2011-07-28 -1 BCR22PN PNP Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC ), hFE = 20 10 3 1 V VCEsat hFE 0.8 10 2 0.7 0.6 0.5 0.4 -40 °C -25 °C 25 °C 85 °C 125 °C 10 1 0.3 -40 °C -25 °C 25 °C 85 °C 125 °C 0.2 0.1 10 0 -4 10 10 -3 10 -2 A 10 0 -3 10 -1 10 -2 A 10 IC IC Input on Voltage Vi(on) = f (IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f (IC ) VCE = 5V (common emitter configuration) 10 1 10 2 V -40 °C -25 °C 25 °C 85 °C 125 °C -40 °C -25 °C 25 °C 85 °C 125 °C Vi(off) Vi(on) V 10 1 -1 10 0 10 0 10 -1 -5 10 10 -4 10 -3 10 -2 A 10 10 -1 -5 10 -1 IC 10 -4 10 -3 10 -2 A 10 IC 4 2011-07-28 -1 BCR22PN Total power dissipation P tot = f (TS ) 300 mW 250 Ptot 225 200 175 150 125 100 75 50 25 0 0 15 30 45 60 90 105 120 °C 75 150 TS Permissible Pulse Load RthJS = f (t p) Permissible Pulse Load Ptotmax / PtotDC = f (tp ) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 tp 5 2011-07-28 0 Package SOT363 BCR22PN Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 6 2011-07-28 BCR22PN Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-07-28