BC817SU NPN Silicon AF Transistor • For general AF applications 4 • High collector current 3 5 2 6 • High current gain 1 • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type BC817SU Marking B6s 1=E Pin Configuration 2=C 3=C 4=C Package 5=C 6=B SC74 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 45 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Collector current IC Peak collector current, tp ≤ 10 ms ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 1000 Value 500 1 Unit V mA A mA mW TS ≤ 100°C Junction temperature Tj Storage temperature Tstg 150 °C -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit ≤ 50 K/W 1Pb-containing 2For package may be available upon special request calculation of R thJA please refer to Application Note Thermal Resistance 1 2008-10-20 BC817SU Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 45 - - V(BR)CBO 50 - - V(BR)EBO 5 - - DC Characteristics Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 25 V, IE = 0 - - 0.1 VCB = 25 V, IE = 0 , TA = 150 °C - - 50 - - 100 Emitter-base cutoff current I EBO nA VEB = 4 V, IC = 0 DC current gain1) - h FE IC = 100 mA, V CE = 1 V 160 250 400 IC = 500 mA, V CE = 1 V 40 - - VCEsat - - 0.4 VBEsat - - 1.2 fT - 170 - MHz Ccb - 3 - pF Ceb - 40 - Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base emitter saturation voltage1) IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance f = 1 MHz, VBE = 10 V Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2008-10-20 BC817SU DC current gain hFE = ƒ(IC) VCE = 1 V Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 3 0.4 H fe U ce V 10 2 150 °C 25 °C - 50 °C 0.2 125 °C 85 °C 25 °C - 40 °C 0.1 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 A 10 0 -4 10 0 10 -3 10 -2 10 -1 A Ic Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V IC = (V BEsat), hFE = 10 10 5 1.5 V Ι CBO Ube 0.9 BC 817/818 EHP00221 nA 10 4 1.2 1 0 Ic Base-emitter saturation voltage 1.1 10 150 °C 25 °C - 50 °C max 10 3 0.8 0.7 typ 10 2 0.6 0.5 0.4 10 1 0.3 0.2 0.1 0 -4 10 10 -3 10 -2 10 -1 A 10 10 0 0 Ic 0 50 100 ˚C 150 TA 3 2008-10-20 BC817SU Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 EHP00218 1200 MHz mW 5 P tot fT BC 817/818 Total power dissipation Ptot = ƒ(TS) 10 2 800 600 5 400 200 10 1 10 0 10 1 10 2 mA 0 0 10 3 °C 50 150 ΙC TS Permissible Pulse Load RthJS = ƒ(tp ) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 10 3 Ptotmax /PtotDC - RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 10 0 -6 10 0 TP 10 -5 10 -4 10 -3 10 -2 s 10 0 TP 4 2008-10-20 Package SC74 BC817SU Package Outline B 1.1 MAX. 1 2 3 0.35 +0.1 -0.05 Pin 1 marking 0.2 B 6x M A 0.1 MAX. 0.95 0.2 1.9 1.6 ±0.1 4 10˚ MAX. 5 2.5 ±0.1 6 0.25 ±0.1 0.15 +0.1 -0.06 (0.35) 10˚ MAX. 2.9 ±0.2 (2.25) M A Foot Print 2.9 1.9 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.7 8 4 Pin 1 marking 3.15 1.15 5 2008-10-20 BC817SU Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2008-10-20