BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz (V D = 3 V, ID = typ. 6.7 mA) • Noise figure NF = 2.3 dB at 1.8 GHz VD • Reverse isolation > 28 dB and 4 return loss IN / OUT > 12 dB at 1.8 GHz 3 • Pb-free (RoHS compliant) package 1) Circuit Diagram IN OUT 1 2 GND EHA07385 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BGA420 Marking BLs 1, IN Pin Configuration 2, GND 3, OUT 4, VD Package SOT343 Maximum Ratings Parameter Symbol Value Unit Device current ID 15 mA Device voltage VD 6 Total power dissipation Ptot 90 mW 0 dBm V TS = 110 °C RF input power PRFin Junction temperature Tj 150 Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 °C Thermal Resistance Junction - soldering point 2) RthJS ≤ 410 K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-07-12 BGA420 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 5.4 6.7 8 AC characteristics VD = 3 V, Zo = 50 Ω Device current ID Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz |S21|2 Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz S12 Intercept point at the output f = 1 GHz 1dB compression point f = 1 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz mA dB 17 15 11 25 19 17 13 28 - IP3out 10 1.9 2.2 2.3 13 2.3 2.6 2.7 - P-1dB -6 -2.5 - RLin 8 11 - RLout 12 16 - NF dBm dB Typical biasing configuration +VD 100 pF RF OUT 100 pF 10 nF 4 3 BGA 420 1 100 pF 2 GND RF IN EHA07386 Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device to provide a low impedance path. 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground. 2 2007-07-12 BGA420 Typical S-Parameters at TA = 25 °C f S11 GHz MAG S21 ANG VD = 3 V, Zo = 50 Ω 0.1 0.5686 -8.5 0.5 0.5066 -19.2 0.8 0.4404 -28.7 1 0.3904 -34.6 1.5 0.2841 -50.5 1.8 0.2343 -60.6 1.9 0.2136 -64.1 2 0.2062 -68.4 2.4 0.1688 -89.7 3 0.1558 -104.9 S12 S22 MAG ANG MAG ANG MAG ANG 9.314 8.393 7.352 6.69 5.244 4.567 4.355 4.165 3.417 2.861 170.6 149.4 135.2 126.8 111.1 104 102 99.7 91.7 85.3 0.0268 0.0248 0.0236 0.024 0.0314 0.0378 0.0406 0.0426 0.0549 0.0682 12.7 11.7 25.6 35.9 57.2 63.5 66.1 67.2 71.4 73.1 0.2808 0.2613 0.2361 0.2144 0.1398 0.0979 0.0838 0.0689 0.0224 0.0284 -8.6 -3.8 -6.7 -9 -15 -18.2 -21.5 -22.2 -48 -147.5 Spice-model BGA 420 +V BGA 420-chip including parasitics 14 R2 13 R1 IN OUT R3 C1 11 C P3 T1 C P1 C P4 C P2 12 GND T1 T501 R1 14.5kΩ R2 140Ω R3 2.4kΩ C1 2.3pF CP1 0.2pF CP2 0.2pF CP3 0.6pF CP4 0.1pF EHA07387 3 2007-07-12 BGA420 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = 0.21024 fA BF = 83.23 - NF = 1.0405 - VAF = 39.251 V IKF = 0.16493 A ISE = 15.761 fA NE = 1.7763 - BR = 10.526 - NR = 0.96647 - VAR = 34.368 V IKR = 0.25052 A ISC = 0.037223 fA NC = 1.3152 - RB = 15 Ω IRB = 0.21215 A RBM = 1.3491 Ω RE = 1.9289 RC = 0.12691 Ω CJE = 3.7265 fF VJE = 0.70367 V MJE = 0.37747 TF = 4.5899 ps XTF = 0.3641 - VTF = 0.19762 V ITF = 1.3364 mA PTF = 0 deg CJC = 96.941 fF VJC = 0.99532 V MJC = 0.48652 - XCJC = 0.08161 - TR = 1.4935 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99469 - TNOM 300 K - RS = 20 Ω L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 nH nH nH nH nH nH fF fF fF fF fF fF nH nH C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : 2 IS = fA N= 1.02 All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: L2 +V C1 C3 L1 C CB C2 14 L BO L BI IN 11 BGA 420 Chip 12 C BE 13 L CI L CO OUT C’-E’Diode C CE L EI L EO GND EHA07388 Valid up to 3GHz Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 2007-07-12 BGA420 Insertion power gain |S21|2 = f (f) Insertion power gain |S21|2 = f (f) VD = 3 V VD, ID = parameter TA = parameter 25 22 VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3,4mA TA=-20°C TA=+25°C TA=+75°C 18 |S21|2 |S21|2 dB dB 15 16 14 12 10 10 8 6 5 4 2 0 -1 10 10 0 GHz 10 0 -1 10 1 10 0 GHz f 10 1 10 1 f Noise figure NF = f (f) Noise figure NF = f (f) VD = 3V TA = parameter VD,ID = parameter 5 3.5 dB dB 2.5 NF NF VD=5V, ID=12.4mA VD=3V, ID=6.4mA TA=+75°C TA=+25°C TA=-20°C 3 2 1.5 2 1 1 0.5 0 -1 10 10 0 GHz 10 0 -1 10 1 f 10 0 GHz f 5 2007-07-12 BGA420 Intercept point at the output Intercept point at the output IP3out = f (f) IP3out = f (f), VD = 3V VD,ID = parameter TA = parameter 20 dBm 16 12 VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3.4mA dBm 10 IP3out IP3out 9 14 12 8 7 10 6 8 5 TA=-20°C TA=+25°C TA=75°C 4 6 3 4 2 2 0 -1 10 1 10 0 GHz 10 0 -1 10 1 f 10 0 GHz 10 f 6 2007-07-12 1 Package SOT343 BGA420 Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 7 2007-07-12 BGA420 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-07-12