BCP69... PNP Silicon AF Transistor • For general AF applications 4 • High collector current 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary type: BCP68 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking BCP69-25 ...-25* Pin Configuration 1=B 2=C 3=E 4=C - Package - SOT223 * Marking is the same than type-name Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 20 Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp ≤ 10 ms I CM 2 Base current IB 100 Peak base current I BM 200 Total power dissipation- Ptot 3 W 150 °C V A mA TS ≤ 114 °C Junction temperature Tj Storage temperature T stg 1Pb-containing -65 ... 150 package may be available upon special request 1 2008-10-10 BCP69... Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit ≤ 12 K/W Values Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. typ. max. V(BR)CEO 20 - - V(BR)CBO 25 - - V(BR)CES 25 - - V(BR)EBO 5 - - DC Characteristics Collector-emitter breakdown voltage V IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current I CBO µA VCB = 25 V, IE = 0 - - 0.1 VCB = 25 V, IE = 0 , TA = 150 °C - - 100 DC current gain2) - h FE IC = 5 mA, VCE = 10 V 50 - - IC = 500 mA, V CE = 1 V, BCP69-16 IC = 500 mA, V CE = 1 V, BCP69-25 100 160 250 160 250 375 IC = 1 A, VCE = 1 V 60 - - - - 0.5 IC = 5 mA, VCE = 10 V - 0.6 - IC = 1 A, VCE = 1 V - - 1 - 100 - Collector-emitter saturation voltage2) VCEsat V IC = 1 A, IB = 100 mA Base-emitter voltage2) VBE(ON) AC Characteristics Transition frequency fT MHz IC = 100 mA, VCE = 5 V, f = 100 MHz 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 2008-10-10 BCP69... DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 BCP 69 EHP00285 BCP 69 10 4 5 ΙC EHP00286 mA 100 ˚C 10 3 25 ˚C 10 2 5 100 ˚C 25 ˚C -50 ˚C -50 ˚C 5 10 2 5 10 1 10 1 5 5 10 0 10 0 10 0 10 1 10 2 mA 10 4 0 0.2 0.6 0.4 ΙC Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V IC = ƒ(V BEsat), hFE = 10 BCP 69 EHP00287 10 5 mA Ι CBO ΙC 10 BCP 69 EHP00284 nA 10 4 100 ˚C 25 ˚C -50 ˚C 3 0.8 V CEsat Base-emitter saturation voltage 10 4 V max 10 3 10 2 typ 10 2 10 1 10 1 10 0 0 0.2 0.4 0.6 0.8 V 10 0 1.2 V BEsat 0 50 100 ˚C 150 TA 3 2008-10-10 BCP69... Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 BCP 69 Total power dissipation Ptot = ƒ(TS) EHP00283 3.5 MHz fT W 5 P tot 2.5 2 10 2 1.5 5 1 0.5 10 1 0 10 10 1 10 2 mA 0 0 10 3 15 30 45 60 90 105 120 °C 75 150 ts ΙC Permissible Pulse Load RthJS = ƒ(tp ) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 Ptotmax /PtotDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2008-10-10 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BCP69... 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 5 2008-10-10 BCP69... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2008-10-10