BCP51...-BCP53... PNP Silicon AF Transistors • For AF driver and output stages 4 • High collector current 3 2 • Low collector-emitter saturation voltage 1 • Complementary types: BCP54 ... BCP56 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BCP51 * 1=B 2=C 3=E SOT223 BCP51-16 * 1=B 2=C 3=E SOT223 BCP52-16 * 1=B 2=C 3=E SOT223 BCP53-10 * 1=B 2=C 3=E SOT223 BCP53-16 * 1=B 2=C 3=E SOT223 * Marking is the same as type-name 1Pb-containing package may be available upon special request 1 2008-10-10 BCP51...-BCP53... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCP51 45 BCP52 60 BCP53 80 Collector-base voltage Unit VCBO BCP51 45 BCP52 60 BCP53 100 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp ≤ 10 ms ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 2 W 150 °C A mA TS ≤ 120°C Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS 1For -65 ... 150 Value ≤ 15 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-10-10 BCP51...-BCP53... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BCP51 45 - - IC = 10 mA, IB = 0 , BCP52 60 - - IC = 10 mA, IB = 0 , BCP53 80 - - IC = 100 µA, IE = 0 , BCP51 IC = 100 µA, IE = 0 , BCP52 45 - - 60 - - IC = 100 µA, IE = 0 , BCP53 100 - - 5 - - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 °C - - 20 DC current gain1) - h FE IC = 5 mA, VCE = 2 V 25 - - IC = 150 mA, V CE = 2 V, BCP51 40 - 250 IC = 150 mA, V CE = 2 V, BCP53-10 IC = 150 mA, V CE = 2 V, BCP51-16...BCP53-16 63 100 160 100 160 250 IC = 500 mA, V CE = 2 V 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 125 - Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, V CE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1Pulse test: t < 300µs; D < 2% 3 2008-10-10 BCP51...-BCP53... DC current gain hFE = ƒ(IC) VCE = 2 V 10 3 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 BCP 51...53 EHP00261 5 ΙC 10 2 BCP 51...53 10 4 EHP00264 mA 10 3 100 C 25 C 5 -50 C 100 C 25 C -50 C 5 10 2 5 10 1 10 1 5 5 10 0 0 10 10 1 10 2 10 3 10 0 mA 10 4 0 0.2 0.6 0.4 ΙC Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V IC = ƒ(V BEsat), hFE = 10 ΙC BCP 51...53 EHP00263 10 4 Ι CBO mA BCP 51...53 EHP00262 nA max 10 3 10 0.8 V CEsat Base-emitter saturation voltage 10 4 V 3 100 C 25 C -50C 10 2 10 2 typ 10 1 10 1 10 0 10 0 0 0.2 0.4 0.6 0.8 V 10 -1 1.2 V BEsat 0 50 100 C 150 TA 4 2008-10-10 BCP51...-BCP53... Transition frequency fT = ƒ(IC) VCE = 10 V BCP 51...53 10 3 Total power dissipation Ptot = ƒ(TS) EHP00260 2.4 MHz W 5 P tot fT 1.6 10 2 1.2 5 0.8 0.4 10 1 10 0 10 1 10 2 mA 0 0 10 3 15 30 45 60 90 105 120 °C 75 150 TS ΙC Permissible Pulse Load RthJS = ƒ(tp ) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 Ptotmax /PtotDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp TP 5 2008-10-10 BCP51...-BCP53... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2008-10-10