BFY640 HiRel NPN Silicon Germanium RF Transistor HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz 4 3 1 2 Hermetically sealed microwave package ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BFY640B - Pin Configuration 1 2 C E Package 3 B 4 E Micro-X Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Ta > 0 °C Ta ≤ 0 °C VCEO 4.0 3.7 V V Collector-base voltage VCBO 13 V Emitter-base voltage VEBO 1.2 V IC 50 mA Base current IB 3 mA Junction temperature Tj 175 C Operating temperature range Top -65...+175 C Storage temperature range Tstg -65...+175 C Rth JS 325 K/W Collector current 1) Thermal Resistance Junction-soldering point 2) Notes.: 1) For TA > 25°C the derating of IC has to be considered. Nomograms will be available on request. 2) TS is measured on the emittter lead at the soldering point to the pcb. IFAG IMM RPD D HIR 1 of 3 V1, June 2010 BFY640 Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. ICBO - - 10 µA ICEX - - 200 µA IEBO - - 5 A hFE 135 180 250 - CCB - 0.07 - pF CCE - 0.45 - pF CEB - 0.6 - pF DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 Collector-emitter cutoff current 1) VCE = 4.0 V, IB = 0.1 µA Emitter-base cuttoff current VEB = 1.2 V, IC = 0 DC current gain IC = 30 mA, VCE = 3 V AC Characteristics Collector-base capacitance VCB = 2 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure (ZS = Zsopt) F dB IC = 5 mA, VCE = 3 V, f = 1.8 GHz IC = 5 mA, VCE = 3 V, f = 6.0 GHz - 0.8 1.1 - |S21e|2 Insertion power gain (ZS = ZL = 50 ) IC = 30 mA, VCE = 3 V, f = 1.8 GHz IC = 30 mA, VCE = 3 V, f = 6.0 GHz dB - 22.5 12.5 - - 24 - - 14 - Gms2) Power gain (ZS = ZSopt , ZL = ZLopt) IC = 30 mA, VCE = 3 V, f = 1.8 GHz dB Gma2) Power gain (ZS = ZSopt , ZL = ZLopt) IC = 30 mA, VCE = 3 V, f = 6.0 GHz dB Notes.: 1) This Test assures V(BR)CE0 > 4.0V 2) Gma S 21 ( k k 2 1) , S12 IFAG IMM RPD D HIR Gms S 21 S12 2 of 3 V1, June 2010 BFY640 Micro-X Package 4 Edition 2010-06 3 Published by Infineon Technologies AG 1 2 81726 München, Germany © Infineon Technologies AG 2010 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IMM RPD D HIR 3 of 3 V1, June 2010