BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFQ19S Marking FG Pin Configuration 1=B 2=C 3=E Package SOT89 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 210 Base current IB 21 Total power dissipation2) Ptot 1 W V mA TS ≤ 85°C Junction temperature Tj 150 °C Operation junction temperature range T jo - ... - - Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 °C Thermal Resistance Parameter Symbol Junction - soldering point 3) RthJS Value Unit ≤ 65 K/W 1Pb-containing 2T package may be available upon special request is measured on the collector lead at the soldering point to the pcb S 3For calculation of RthJA please refer to Application Note Thermal Resistance 1 2010-03-12 BFQ19S Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 15 - - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 100 µA hFE 70 100 140 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gainIC = 70 mA, VCE = 8 V, pulse measured 2 2010-03-12 BFQ19S Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 4 5.5 - Ccb - 1.05 1.35 Cce - 0.4 - Ceb - 3.9 - GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 20 mA, VCE = 6 V, Z S = ZSopt, f = 900 MHz - 1.8 - f = 1.8 GHz - 3 - f = 900 MHz - 11.5 - f = 1.8 GHz - 7 - Power gain, maximum available1) G ma IC = 70 mA, VCE = 8 V, Z S = ZSopt, ZL = ZLopt, |S 21e|2 Transducer gain dB IC = 30 mA, VCE = 8 V, Z S = Z L = 50Ω, f = 900 MHz - 9.5 - f = 1.8 GHz - 4 - - 32 - Third order intercept point at output IP 3 dBm VCE = 8 V, I C = 70 mA, Z S = ZSopt, Z L = ZLopt, f = 1.8 GHz 2 1/2 ma = |S21/S 12| (k-(k -1) ) 1G 3 2010-03-12 BFQ19S Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 2 1200 mW 1000 K/W RthJS Ptot 900 800 700 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 10 0 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) Ptotmax /PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2010-03-12 Package SOT89 BFQ19S Package Outline 4.5 ±0.1 45˚ B 1.5 ±0.1 1) 1.6 ±0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10˚ MAX. 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 0.25 ±0.05 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 5 1.6 2010-03-12 BFQ19S Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2010-03-12