VISHAY P4KE550

P4KE530 & P4KE550
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional only
• Excellent clamping capability
• Very fast response time
DO-204AL (DO-41)
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
VBR uni-directional
530 V, 550 V
PPPM
300 W
PD
1.0 W
VWM
477 V, 495 V
VC
760 V
TJ max.
150 °C
Use in sensitive electronics protection against
voltage transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 4)
Peak pulse power dissipation
(1)(2)
(Fig. 1)
Stand-off voltage
TJ, TSTG
P4KE550
1.0
PPPM
VWM
Operating junction and storage temperature range
P4KE530
PD
W
300
477
W
495
- 55 to + 150
UNIT
V
°C
Notes:
(1) Non repetitive current pulse per Fig. 3 and derated above 25 °C per Fig. 2
(2) Peak pulse power waveform is 10/1000 µs
Document Number: 88366
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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P4KE530 & P4KE550
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
P4KE530
P4KE550
UNIT
530
550
V
Minimum breakdown voltage
100 µA
VBR
Max. clamping voltage
400 mA, 10/1000 µs waveform
VC
760
V
Maximum DC reverse leakage current
at VWM
ID
1.0
µA
Typical temperature coefficient
of VBR
Typical capacitance
650
mV/°C
1 MHz, VR = 0 V
CJ
90
pF
1 MHz, VR = 200 V
CJ
7.5
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
P4KE530
P4KE550
UNIT
Typical thermal resistance, junction to lead
RθJL
75
°C/W
Typical thermal resistance, junction to ambient
RθJA
125
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
P4KE530-E3/54
0.350
54
5500
13" diameter paper tape and reel
P4KE550-E3/54
0.350
54
5500
13" diameter paper tape and reel
PPPM - Peak Pulse Power (kW)
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1
0.1
0.1
1
10
100
1000
10 000
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage (%)
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
75
50
25
0
0
25
50
75
100
125
150
175
200
td - Pulse Width (µs)
TJ - Initial Temperature (°C)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88366
Revision: 20-Oct-08
P4KE530 & P4KE550
Vishay General Semiconductor
tr = 10 µs
1.00
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
PD - Power Dissipation (W)
IPPM - Peak Pulse Current, % IRSM
150
100
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
60 Hz
Resistive or
Inductive Load
0.75
0.50
L = 0.375" (9.5 mm)
Lead Lengths
0.25
td
0
0
0
1.0
2.0
3.0
4.0
0
25
50
75
100
125
150
175
t - Time (ms)
TL - Lead Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Pulse Derating Curve
200
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
APPLICATION NOTES
• Respect Thermal Resistance (PCB Layout) - as the
temperature coefficient also contributes to the
clamping voltage
• Select minimum breakdown voltage, so you get
acceptable power dissipation and PCB tie point
temperature. Devices with higher breakdown
voltage will have a shorter conduction time and will
dissipate less power
• Clamping voltage is influenced by internal
resistance - design approximation is 7 V per
100 mA slope
Document Number: 88366
Revision: 20-Oct-08
• Keep temperature of TVS lower than TOPSwitch®
as a recommendation
• Maximum current is determined by the maximum
TJ and can be higher than 300 mA. Contact
supplier for different clamping voltage/current
arrangements
• Minimum breakdown voltage can be customized for
other applications. Contact supplier
• TOPSwitch is a registered trademark of Power
Integrations, Inc.
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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