Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYW29E series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 150 V/ 200 V k 1 VF ≤ 0.895 V a 2 IF(AV) = 8 A IRRM ≤ 0.2 A trr ≤ 25 ns GENERAL DESCRIPTION PINNING Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYW29E series is supplied in the conventional leaded SOD59 (TO220AC) package. PIN SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode 2 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. BYW29E VRRM VRWM VR IF(AV) IFRM IFSM IRRM IRSM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Peak non-repetitive reverse surge current Operating junction temperature Storage temperature MAX. UNIT - -150 150 -200 200 V - 150 200 V - 150 200 V square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) tp = 2 µs; δ = 0.001 - 80 88 A A - 0.2 A tp = 100 µs - 0.2 A - 150 ˚C - 40 150 ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ November 1998 1 MIN. MAX. UNIT - 8 kV Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29E series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air TYP. MAX. UNIT - - 2.7 K/W - 60 - K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage IR Reverse current Qrr trr1 trr2 Vfr Reverse recovered charge Reverse recovery time Reverse recovery time Forward recovery voltage November 1998 CONDITIONS MIN. IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRWM VR = VRWM; Tj = 100˚C IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/µs 2 - TYP. MAX. UNIT 0.8 0.92 1.1 2 0.2 4 20 15 1 0.895 1.05 1.3 10 0.6 11 25 20 - V V V µA mA nC ns ns V Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYW29E series 0.5A F dt IF t 0A rr time Q 10% s I rec = 0.25A IR 100% trr2 I I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 12 F Tmb(max) / C 108 D = 1.0 BYW29 PF / W Vo = 0.791 V Rs = 0.013 Ohms 115 10 0.5 8 time 122 0.2 6 129 0.1 VF 4 tp I V 143 t T 0 time Fig.2. Definition of Vfr 0 2 4 6 IF(AV) / A 8 10 150 12 Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. R 8 PF / W a = 1.57 Rs = 0.013 Ohms 129 2.8 5 Voltage Pulse Source 132.5 4 4 122 125.5 1.9 2.2 6 D.U.T. Tmb(max) / C BYW29 Vo = 0.791 V 7 136 3 139.5 2 143 1 146.5 to ’scope 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.3. Circuit schematic for trr2 November 1998 136 tp T 2 fr VF Current shunt D= 3 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29E series trr / ns 100 Qs / nC 1000 IF=10A 5A 2A 1A IF=10A 100 10 IF=1A 10 1 1.0 1 10 dIF/dt (A/us) 100 1.0 Fig.7. Maximum trr at Tj = 25 ˚C. 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 10 -dIF/dt (A/us) 10 IF=10A Transient thermal impedance, Zth j-mb (K/W) 1 1 IF=1A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 25 ˚C. 30 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.11. Transient thermal impedance; Zth j-mb = f(tp). BYW29 IF / A Tj=150 C Tj=25 C 20 typ max 10 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj November 1998 4 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29E series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.12. TO220AC; pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1998 5 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29E series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1998 6 Rev 1.300