Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYV42E, BYV42EB series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V a2 3 a1 1 IO(AV) = 30 A IRRM = 0.2 A k 2 trr ≤ 28 ns GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV42E series is supplied in the SOT78 conventional leaded package. The BYV42EB series is supplied in the SOT404 surface mounting package. PINNING PIN SOT78 (TO220AB) DESCRIPTION 1 anode 1 (a) 2 cathode (k) 1 3 anode 2 (a) tab cathode (k) SOT404 tab tab 2 1 1 23 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage IO(AV) Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS MIN. BYV42E / BYV42EB IFRM IFSM IRRM IRSM Tstg Tj Tmb ≤ 144˚C square wave δ = 0.5; Tmb ≤ 108 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 108 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature - MAX. -150 150 150 150 UNIT -200 200 200 200 V V V - 30 A - 30 A - 150 160 A A - 0.2 A - 0.2 A -40 - 150 150 ˚C ˚C 1. It is not possible to make connection to pin 2 of the SOT404 package 2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting tab. July 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV42E, BYV42EB series ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. UNIT - 8 kV THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient per diode both diodes SOT78 package, in free air SOT404 and SOT428 packages, pcb mounted, minimum footprint, FR4 board Rth j-a MIN. TYP. MAX. UNIT - 60 50 2.4 1.4 - K/W K/W K/W K/W MIN. TYP. MAX. UNIT - 0.78 0.95 1.00 0.5 10 6 20 0.85 1.05 1.20 1 100 15 28 V V V mA µA nC ns - 13 1 22 - ns V ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs trr1 Reverse recovery charge Reverse recovery time trr2 Vfr Reverse recovery time Forward recovery voltage IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRWM; Tj = 100 ˚C VR = VRWM IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/µs July 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYV42E, BYV42EB series 0.5A F dt IF t 0A rr time Q 10% s I rec = 0.25A IR 100% trr2 I I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 20 F PF / W Tmb(max) / C 102 D = 1.0 BYV42 Vo = 0.705 V Rs = 0.0097 Ohms 0.5 15 time 0.2 0.1 10 114 126 VF V tp I 5 D= tp T 138 fr t T VF 0 time Fig.2. Definition of Vfr 0 5 10 15 IF(AV) / A 20 150 25 Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. R 15 PF / W Tmb(max) / C 114 a = 1.57 BYV42 Vo = 0.705 V Rs = 0.0097 Ohms 1.9 2.2 D.U.T. 2.8 10 Voltage Pulse Source 4 Current shunt 138 5 to ’scope 0 Fig.3. Circuit schematic for trr2 July 1998 126 0 5 IF(AV) / A 10 150 15 Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV42E, BYV42EB series trr / ns 100 Qs / nC 1000 IF=20A 10A 5A 2A 1A IF=20A 100 10 IF=1A 10 1 1 10 dIF/dt (A/us) 1.0 100 Fig.7. Maximum trr at Tj = 25 ˚C; per diode 10 -dIF/dt (A/us) 100 Fig.10. Maximum Qs at Tj = 25 ˚C; per diode Irrm / A 10 1.0 10 Transient thermal impedance, Zth j-mb (K/W) IF=20A 1 1 IF=1A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV42E 10s Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp). IF / A 50 Tj = 150 C 40 Tj = 25 C 30 20 typ 10 max 0 0 0.5 VF / V 1.0 1.5 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj July 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV42E, BYV42EB series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV42E, BYV42EB series MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.13. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.14. SOT404 : soldering pattern for surface mounting. Notes 1. Epoxy meets UL94 V0 at 1/8". July 1998 6 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV42E, BYV42EB series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Rev 1.200