DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM26 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of February 1994 1996 May 24 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack • Also available with preformed leads for easy insertion. , 2/3 page k(Datasheet) construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM104 Fig.1 Simplified outline (SOD64) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS UNIT BYM26A − 200 V BYM26B − 400 V BYM26C − 600 V BYM26D − 800 V BYM26E − 1000 V BYM26F − 1200 V BYM26G − 1400 V − 200 V continuous reverse voltage BYM26B − 400 V BYM26C − 600 V BYM26D − 800 V BYM26E − 1000 V BYM26F − 1200 V BYM26G − 1400 V average forward current BYM26A to E BYM26F and G IF(AV) MAX. repetitive peak reverse voltage BYM26A IF(AV) MIN. average forward current BYM26A to E BYM26F and G 1996 May 24 Ttp = 55 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 65 °C; PCB mounting (see Fig.19); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 2 − 2.30 A − 2.40 A − 1.05 A − 1.00 A Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM IFRM BYM26 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX. UNIT Ttp = 55 °C; see Figs 6 and 7 BYM26A to E − 19 A BYM26F and G − 21 A repetitive peak forward current Tamb = 65 °C; see Figs 8 and 9 BYM26A to E − 8.0 A BYM26F and G − 8.5 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 45 A ERSM non-repetitive peak reverse avalanche energy − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. − − 1.34 V − − 1.34 V − − 2.65 V − − 2.30 V BYM26A 300 − − V BYM26B 500 − − V L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Figs 12 and 13 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYM26A to E CONDITIONS IF = 2 A; Tj = Tj max; see Figs 14 and 15 BYM26F and G VF forward voltage BYM26A to E IF = 2 A; see Figs 14 and 15 BYM26F and G V(BR)R IR trr reverse avalanche breakdown voltage IR = 0.1 mA BYM26C 700 − − V BYM26D 900 − − V BYM26E 1100 − − V BYM26F 1300 − − V BYM26G 1500 − − V VR = VRRMmax; see Fig.16 − − 10 µA VR = VRRMmax; Tj = 165 °C; see Fig.16 − − 150 µA − − 30 ns − − 75 ns − − 150 ns reverse current reverse recovery time BYM26A to C BYM26D and E when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.20 BYM26F and G 1996 May 24 UNIT 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL Cd PARAMETER diode capacitance CONDITIONS f = 1 MHz; VR = 0 V; see Figs 17 and 18 MIN. TYP. MAX. UNIT − 85 − pF BYM26D and E − 75 − pF BYM26F and G − 65 − pF − − 7 A/µs − − 6 A/µs − − 5 A/µs BYM26A to C dI R -------dt BYM26 series maximum slope of reverse recovery when switched from IF = 1 A to VR ≥ 30 V and current dI F/dt = −1 A/µs; BYM26A to C see Fig.21 BYM26D and E BYM26F and G THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19. For more information please refer to the “General Part of associated Handbook”. 1996 May 24 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series GRAPHICAL DATA MSA875 2.4 MBD421 3 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) 1.8 20 15 10 lead length (mm) lead length 10 mm 2 1.2 1 0.6 0 100 0 T tp (o C) 0 200 0 BYM26A to E a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 200 Ttp (o C) BYM26F and G a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 MLB490 2.0 I F(AV) (A) 1.6 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). MBD416 2.0 I F(AV) (A) 1.6 handbook, halfpage handbook, halfpage 1.2 1.2 0.8 0.8 0.4 0.4 0 0 0 100 o T amb ( C) 200 0 BYM26A to E a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Switched mode application. Fig.4 100 o T amb ( C) 200 BYM26F and G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Switched mode application. Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). 1996 May 24 100 Fig.5 5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series MSA879 20 I FRM (A) δ = 0.05 16 0.1 12 0.2 8 0.5 4 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYM26A to E Ttp = 55°C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MBD449 25 I FRM (A) δ = 0.05 20 15 0.1 10 0.2 0.5 5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYM26F and G Ttp = 55°C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series MSA878 10 I FRM (A) 8 δ = 0.05 6 0.1 4 0.2 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYM26A to E Tamb = 65 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MBD443 10 I FRM (A) δ = 0.05 8 6 0.1 4 0.2 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYM26F and G Tamb = 65 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series MSA876 5 P (W) a=3 2.5 2 1.57 MBD430 5 P (W) 1.42 a=3 4 4 3 3 2 2 1 1 0 2.5 2 1.57 1.42 0 0 0.6 1.8 2.4 I F(AV) (A) 1.2 0 BYM26A to E a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. 0.6 1.2 1.8 2.4 I F(AV)(A) BYM26F and G a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MSA873 200 MLB601 200 handbook, halfpage handbook, halfpage Tj (°C) Tj ( o C) 100 100 A B C D E F 0 0 400 800 VR (V) 0 1200 BYM26A to E Solid line = VR. Dotted line = VRRM; δ = 0.5. 1000 VR (V) 2000 BYM26F and G Solid line = VR. Dotted line = VRRM; δ = 0.5. Fig.12 Maximum permissible junction temperature as a function of reverse voltage. 1996 May 24 0 G Fig.13 Maximum permissible junction temperature as a function of reverse voltage. 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series MSA877 MBD426 10 10 handbook, halfpage handbook, halfpage 8 IF (A) 8 6 6 4 4 2 2 IF (A) 0 0 0 2 4 VF (V) 6 0 2 4 VF (V) BYM26A to E Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. BYM26F and G Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.14 Forward current as a function of forward voltage; maximum values. Fig.15 Forward current as a function of forward voltage; maximum values. MGC549 103 handbook, halfpage MSA874 10 2 handbook, halfpage IR (µA) Cd (pF) 102 BYM26A,B,C 10 BYM26D,E 10 1 1 0 100 Tj (°C) 200 1 102 V R (V) 103 BYM26A to E f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.16 Reverse current as a function of junction temperature; maximum values. 1996 May 24 10 Fig.17 Diode capacitance as a function of reverse voltage; typical values. 9 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series MBD435 10 2 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 10 2 V R (V) 10 3 MGA200 BYM26F and G f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.18 Diode capacitance as a function of reverse voltage; typical values. DUT handbook, full pagewidth Fig.19 Device mounted on a printed-circuit board. IF (A) + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.20 Test circuit and reverse recovery time waveform and definition. 1996 May 24 10 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series IF halfpage ndbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.21 Reverse recovery definitions. 1996 May 24 11 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series , PACKAGE OUTLINE k handbook, full pagewidth 4.5 max 28 min 5.0 max Dimensions in mm. The marking band indicates the cathode. 28 min a 1.35 max MBC049 Fig.22 SOD64. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 12